Lam Research Corporation

Hsiang-yun Lee

Bart Jan Van Schravendijk

Purushottam Kumar

Kaihan Abidi Ashtiani

Jason Daejin Park

Kevin Madrigal

Frances Katherine Zelaya

A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition

A semiconductor processing gas flow manifold is provided that allows for the gas flow characteristics of the manifold gas flow paths to be individually adjusted outside of a semiconductor processing chamber. The gas flow manifold may be connected to a process gas dispersion device inside the semiconductor processing chamber. The process gas dispersion device may have multiple gas flow channels, each channel separately connected to a manifold gas flow path and targeted at a region on the semiconductor wafer. The adjustment of the individual manifold gas flow paths may vary the amount of process gas dispersed through each process gas dispersion gas flow channel onto the corresponding region of the semiconductor wafer.

Apparatus and method for improving wafer uniformity

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Cupertino, CA, United States of America

Hsiang-yun Lee