Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiang-Yu Tsai

Hsiang-Ku Shen

Chih-Hung Lu

Wen-Tung Chen

Han-Yi Chen

Wei-Chiang Hung

Kuo Hui Chang

Jian-Ming Huang

Ping-Chung Liu

Ecko Lu

Semiconductor devices and methods of forming the same are provided. A method according to an embodiment includes receiving a substrate including a lower contact feature, depositing a first dielectric layer over a substrate, forming a metal-insulator-metal (MIM) structure over the first dielectric layer, depositing a second dielectric layer over the MIM structure, performing a first etch process to form an opening that extends through the second dielectric layer to expose the MIM structure, performing a second etch process to extend the opening through the MIM structure to expose the first dielectric layer; and performing a third etch process to further extend the opening through the first dielectric layer to expose the lower contact feature. Etchants of the first etch process and the third etch process include fluorine while the etchant of the second etch process is free of fluorine.

Process for forming metal-insulator-metal structures

A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; and a stress memorization technology (SMT) sidewall spacer over a sidewall of the gate stack. The gate stack includes a gate dielectric layer over the semiconductor substrate and a gate electrode over the gate dielectric layer. The SMT sidewall spacer provides a stress for a channel region beneath the gate stack.

Semiconductor structure and manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

Hsiang-Yu Tsai