Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiang-Yu Chou

Shang-Chieh Chien

Jeng-Horng Chen

Shu-Hao Chang

Chia-Chen Chen

Jui-Ching Wu

Ming-Chin Chien

Kuo-Chang Kau

Shun-Der Wu

The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

System and method for photomask particle detection

A method of reducing resist outgassing for EUV lithography is disclosed. The method includes forming a material layer over a substrate wherein a top surface of the material layer contains a certain concentration of a quencher or a base. The method further includes forming a resist layer over the top surface of the material layer and exposing the resist layer to a EUV radiation for patterning. The quencher or the base underneath the resist layer acts to suppress resist outgassing during the EUV exposure. The material layer itself may serve as a hard mask layer or an anti-reflection layer for the patterning process, in addition to being the carrier of the quencher or the base. The method can be used in other types of lithography, such as e-beam lithography, for reducing resist outgassing.

Method for lithography patterning

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Taipei, Taiwan

Hsiang-Yu Chou