Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiang-Ming Chang

Ya-Hui Chang

Liang-Yin Chen

Chia-Cheng Chen

Yu-Tien Shen

Wei-Ting Chien

Chun-Yen Chang

Chih-Kai Yang

Yu-Tse Lai

Hsin-Chih Wang

A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

System and method for multiple step directional patterning

A critical dimension uniformity control method is provided. The method includes gathering a first CDU by a first critical dimension from a first wafer after being processed by a first surface process. The method includes determining a first calibration process based on the first CDU. The determining includes an intra dose correction step for correcting reticle-dependent deviation, a thru-slit dose sensitivity correction step for correcting time-dependent deviation, and an inter dose correction step for correcting process-dependent deviation. The method includes calibrating the first surface process by the first calibration process to determine a second surface process different from the first surface process.

Critical dimension uniformity (CDU) control method and semiconductor substrate processing system

A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

Method for fabricating semiconductor device

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Hsinchu, Taiwan

Hsiang-Ming Chang