International Business Machines Corporation

Infineon Technologies Ag

Hsiang-Jen Huang

Bruce Bennett Doris

Lawrence Alfred Clevenger

Haining S Yang

Dureseti Chidambarrao

Keith Kwong Hon Wong

Christian Lavoie

Nivo Rovedo

Sunfei Fang

Paul David Agnello

Patrick William Dehaven

Chester T Dziobkowski

Richard J Murphy

Frederick William Buehrer

A stressed film applied across a boundary defined by a structure or a body (e.g. substrate or layer) of semiconductor material provides a change from tensile to compressive stress in the semiconductor material proximate to the boundary and is used to modify boron diffusion rate during annealing and thus modify final boron concentrations. In the case of a field effect transistor, the gate structure may be formed with or without sidewalls to regulate the location of the boundary relative to source/drain, extension and/or halo implants. Different boron diffusion rates can be produced in the lateral and vertical directions and diffusion rates comparable to arsenic can be achieved. Reduction of junction capacitance of both nFETs and pFETs can be achieved simultaneously with the same process steps.

Reduction of boron diffusivity in pFETs

A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.

Salicide formation method

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Fishkill, NY, United States of America

Hsiang-Jen Huang