United Microelectronics Corp.

Hsiang-Hua Hsu

Chih-Chung Wang

Sheng-Chen Chung

Chiu-Te Lee

Ke-Feng Lin

Kuang-Hsiu Chen

Chen-An Kuo

Liang-An Huang

Kai-Ting Hu

Yan-Huei Li

A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.

Metal-oxide-semiconductor transistor and method of fabricating the same

Growing community of inventors

Kaohsiung, Taiwan

Hsiang-Hua Hsu