Chunghwa Picture Tubes, Ltd.

Hsiang-Hsien Chung

Chin-Tzu Kao

Ya-Ju Lu

Wen-Kuang Tsao

Wen-Cheng Lu

Yu-Chou Lee

Yea-Chung Shih

Hung-I Hsu

Tsung-Chi Cheng

Ching-Yeh Kuo

Min-Huang Chen

Hung-Yi Hsu

Jui-Chung Chang

A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A patterned semiconductor layer is formed on the gate insulating layer. A source is formed on the patterned semiconductor layer. The peripheral portion of the source is oxidized to form an oxide layer, wherein the oxide layer covers the source and a portion of the patterned semiconductor layer. A protective layer and hydrogen ions are formed, wherein the protective layer covers the oxide layer and the patterned semiconductor layer. The patterned semiconductor layer not covered by the oxide layer is doped with the hydrogen ions to form a drain. A TFT is also provided.

TFT with oxide layer on IGZO semiconductor active layer

Oxidizing the source and doping the drain of a thin-film transistor

A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.

Semiconductor device and its manufacturing method

A thin film transistor including a gate, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source electrode and the drain electrode are disposed over the semiconductor layer.

Thin film transistor with electrodes resistant to oxidation and erosion

Growing community of inventors

Taoyuan County, Taiwan

Hsiang-Hsien Chung