Industrial Technology Research Institute

Hsiang-Chuan Chen

Jen-You Chu

Yi-Ping Chen

Chin-Ching Lin

Mei-Ching Chiang

Pei-Chen Chuang

Pao-Tang Chung

The invention provides a multilayered infrared light reflective structure. The multilayered infrared light reflective structure includes a transparent substrate. A doped oxide film is disposed on the transparent substrate. An oxide isolated layer is disposed on the doped oxide film, thereby allowing incident light to be incident from a top surface of the transparent substrate into the multilayered infrared light reflective structure.

Multilayered infrared light reflective structure

A solar cell device is provided, including a transparent substrate, a transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the transparent conductive layer includes lithium and fluorine-co-doped tin oxides, and the lithium and fluorine-co-doped tin oxides includes a plurality of polyhedron grains, and the polyhedron grains have a polyhedron grain distribution density of 60-95%.

Solar cell device

A solar cell device is provided, including a transparent substrate, a transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the transparent conductive layer includes lithium and fluorine-co-doped tin oxides, and the lithium and fluorine-co-doped tin oxides have a lithium doping concentration of about 0.2&#x2dc;2.3% and a fluorine doping concentration of about 0.1&#x2dc;2.5%.

Growing community of inventors

Taoyuan County, Taiwan

Hsiang-Chuan Chen