Skyworks Solutions, Inc.

Hsiang-Chih Sun

Peter J Zampardi

Hong Shen

Guohao Zhang

Hardik Bhupendra Modi

Jens Albrecht Riege

Mehran Janani

David Steven Ripley

Philip John Lehtola

Dinhphuoc Vu Hoang

Hongxiao Shao

Sandra Louise Petty-Weeks

Matthew Ozalas

Tin Myint Ko

Weimin Sun

Anthony James Lobianco

Hoang Mong Nguyen

Howard E Chen

Matthew Sean Read

Patrick Lawrence Welch

Yifan Guo

Matthew Thomas Ozalas

One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.

Power amplifier modules including semiconductor resistor and tantalum nitride terminated through wafer via

One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods

A semiconductor structure includes a heterojunction bipolar transistor (HBT) including a collector layer located over a substrate, the collector layer including a semiconductor material, and a field effect transistor (FET) located over the substrate, the FET having a channel formed in the semiconductor material that forms the collector layer of the HBT. In some implementations, a second FET can be provided so as to be located over the substrate and configured to include a channel formed in a semiconductor material that forms an emitter of the HBT. One or more of the foregoing features can be implemented in devices such as a die, a packaged module, and a wireless device.

Methodologies related to structures having HBT and FET

One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof.

Power amplifier modules including tantalum nitride terminated through wafer via and related systems, devices, and methods

One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

Power amplifier modules with bifet and harmonic termination and related systems, devices, and methods

Devices and methodologies related to structures having HBT and FET

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3&#xd7;10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Power amplifier modules including related systems, devices, and methods

Bipolar field effect transistor (BiFET) structures and methods of forming the same are provided. In one embodiment, an apparatus includes a substrate and a plurality of epitaxial layers disposed over the substrate. The plurality of epitaxial layers includes a first epitaxial layer, a second epitaxial layer disposed over the first epitaxial layer, and a third epitaxial layer disposed over the second epitaxial layer. The first epitaxial layer includes at least a portion of a channel of a first field effect transistor (FET) and the third epitaxial layer includes at least a portion of a channel of a second FET.

Bipolar field effect transistor structures and methods of forming the same

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Thousand Oaks, CA, United States of America

Hsiang-Chih Sun