Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiang-Chi Chen

Chun-Hung Chen

Chung-Long Chang

Chih-Ping Chao

Kuan-Chi Tsai

Wei-Kung Tsai

Ching-Chung Hsu

Yi-Sin Wang

Shao-Yu Chen

Cheng-Chang Hsu

A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.

Integrated circuit

An integrated circuit includes a stacked MIM capacitor and a thin film resistor and methods of fabricating the same are disclosed. A capacitor bottom metal in one capacitor of the stacked MIM capacitor and the thin film resistor are substantially at the same layer of the integrated circuit, and the capacitor bottom metal and the thin film resistor are also made of substantially the same materials. The integrated circuit with both of a stacked MIM capacitor and a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

Integrated circuit and manufacturing method thereof

Growing community of inventors

Taichung, Taiwan

Hsiang-Chi Chen