United Microelectronics Corp.

Hsi-Wen Chen

Hsin-Pang Lu

Ya-Nan Mou

A non-volatile memory cell includes a plurality of rows of memory cells, a plurality of bit lines coupled to the plurality of rows of memory cells for accessing data to the plurality of rows of memory cells, a plurality of word lines each coupled to a corresponding row of memory cells, and a decoder coupled to the plurality of word lines for enabling at least one row of memory cells of the plurality of rows of memory cells.

Non-volatile memory which can increase the operation window

A sense amplifier circuit may be used for read operation of a non-volatile memory. The sense amplifier circuit includes of a first pre-charge circuit, a second pre-charge circuit, a bias circuit, an enable circuit, a current mirror, a first comparator, a second comparator, a buffer and a counter. The current mirror is able to amplify a cell current of a memory cell to prevent error and shorten or maintain access time as erase count of the memory cell increases.

Sense amplifier circuit capable of determining amplification factor of cell current based on operation cycles

A bit line power implementing circuit is provided, the bit line power implementing circuit has a bit line discharge oscillator to convert the supply voltage to a pulse; a decoder coupled to the bit line discharge oscillator to decode the pulse, and providing a first pulse with a first frequency and a second pulse with a second frequency; a first and a second counters, coupled to the decoder, and receiving the first and the second pulses respectively, and outputting a signal proportional to an average and a minimum read currents respectively; a divider outputting a read current ratio of the average read current to the minimum read current; and a multiplier for multiplying the supply voltage the read current ratio to output a bit line power consumption corresponding to the supply voltage.

Method and circuit for optimizing bit line power consumption

A process monitoring circuit may be used to determine appropriate voltage for integrated circuits including a non-volatile memory. The process monitoring circuit includes a bandgap reference, a clock generator, a negative bias circuit, a temperature insensitive oscillator, a low dropout voltage regulator, a counter, a comparison circuit, and a charge. The process monitoring circuit may also include a pulse width generator. The process monitoring circuit is able to determine the process corner of which a monitored circuit belongs to and generate an output voltage according to the process corner of the monitored circuit.

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Kaohsiung, Taiwan

Hsi-Wen Chen