Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsi-Shen Chuang

Yi-Jen Chen

Chao-Po Lu

Chin-Tsai Chen

Tsukada Kazunori

Pu-Fan Chen

A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.

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Hsinchu, Taiwan

Hsi-Shen Chuang