Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsi-Kuei Cheng

Yi-Jen Lai

Chih-Kang Han

Hsin-Chieh Huang

Kuo-Chio Liu

Chun-Jen Chen

Chen-Shien Chen

Ching Fu Chang

Hsien-Ping Feng

Yung-Sheng Liu

Yi-Chen Liu

Li-Guo Lee

Chung-Yi Lin

Ying-Lang Wang

Steven Lin

Ching-Fu Chang

Kuo-Hui Chang

Sheng-Huan Chiu

Chin-Hao Su

Chi-Wen Liu

Jung-Chih Tsao

Ming-Yuan Cheng

Ray Chuang

Chu-Chang Chen

Dong-Han Shen

Der-Chyang Yeh

Hsing-Kuo Hsia

Ting-Chun Wang

Chih-Ping Chao

Chih-Tsung Lee

Szu-An Wu

Yu-Ku Lin

Hung-Ju Chien

Shih-Tzung Chang

Min-Yuan Cheng

Lin Chung-Yi

Hao-Hsun Lin

Hsun-Chang Chan

Shin-Puu Jeng

Jing-Cheng Lin

Wen-Chun Huang

Huai-Tei Yang

Huang-Yi Huang

Shih-Chi Lin

Hsien-Wen Liu

Chih-Hsien Lin

Yi-Jou Lin

Chun-Chang Chen

Hsiang-Tai Lu

Chien-Chen Li

Wen-Long Lee

Ruey-Yun Shiue

Yuh-Da Fan

Tzi-Yi Shieh

Chin-Te Huang

Tzu-Jui Fang

Francis Wang

Yi-Lang Wang

Tzut Hsun Huang

Jung-Chin Tsao

Chun-Tse Lin

Ting-Chu Wang

Yali Tai

Yi-Wei Chang

Li-Hsiao Chao

A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.

Lthc as charging barrier in info package formation

A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.

Info structure with copper pillar having reversed profile

A package includes a die, first conductive structures, second conductive structures, and an encapsulant. The die has a rear surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns. At least one of the second conductive structures is closer to the die than the first conductive structures. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures.

Package and package-on-package structure having elliptical columns and ellipsoid joint terminals

A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.

Package on package structure

An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.

Package structure and method of forming the same

A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Semiconductor structure

LTHC as charging barrier in info package formation

A package includes a die, first conductive structures, second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. A shape of the first conductive structures is different a shape of the second conductive structures. The second conductive structures include elliptical columns having straight sidewalls. A distance between the first conductive structure that is closest to the die and the die is greater than a distance between the second conductive structure that is closest to the die and the die. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

LTHC as charging barrier in InFO package formation

A package includes a die, a plurality of conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The conductive structures include elliptical columns. The encapsulant encapsulates the die and the conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die and the conductive structures.

A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

Semiconductor device structure and manufacturing method

Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a metal pad over a first substrate and forming a resist layer having an opening over the metal layer. The method for forming a semiconductor structure further includes forming a conductive pillar and a solder layer over the conductive pillar in the opening of the resist layer and removing the resist layer. The method for forming a semiconductor structure further includes removing a portion of the conductive pillar so that the conductive pillar has an angled sidewall.

Method for forming bump structure

Semiconductor package structure

Growing community of inventors

Zhubei, Taiwan

Hsi-Kuei Cheng