Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsi-Jung Wu

Volume Chien

Ying-Lang Wang

Chi-Cherng Jeng

Hsin-Chi Chen

Ru-Shang Hsiao

Ying-Hao Chen

Fu-Tsun Tsai

Hung-Ta Huang

Sheng-Fu Yu

Yu-Heng Cheng

Ying-Hsin Lu

An embodiment includes a semiconductor device, a plurality of fin structures extending from a substrate, the plurality of fin structures having a plurality of first fin structures and a plurality of second fin structures. The semiconductor device also includes a plurality of isolation regions on the substrate and disposed between the plurality of fin structures. The device also includes a plurality of gate structures on the plurality of isolation regions. The device also includes a plurality of epitaxy structures on one of the plurality of first fin structures. The device also includes a plurality of contact structures on the plurality of epitaxy structures, where the plurality of first fin structures, the plurality of gate structures, the plurality of epitaxy structures, and the plurality of contact structures are components of one or more resonators.

Semiconductor device and method

A semiconductor wafer includes a substrate, an integrated circuit and a die seal ring structure. The substrate is with a die region, a die seal ring region surrounding the die region and a scribe line region surrounding the die seal ring region. The substrate includes a first surface and a second surface opposite to the first surface, and periodic recesses within the first surface of the die seal ring region, the scribe line region or both the die seal ring region and the scribe line region. The integrated circuit is located on the first surface and the second surface of the die region. The die seal ring structure is located on the second surface of the die seal ring region. A semiconductor die is also provided.

Semiconductor wafer and semiconductor die

Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.

Image sensor device and method for forming the same

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Kaohsiung, Taiwan

Hsi-Jung Wu