Industrial Technology Research Institute

Hsi-Hsiang Lin

Shih-Che Lo

Chien-Yang Chen

An electron anti-reflection arrangement includes a substrate, an electron resistant layer formed on a top side of the substrate, and an electron anti-reflective layer provided in between the substrate and the electron resistant layer for enabling an electron beam to pass to the inside of the substrate in an incident direction and minimizing the amount of electrons of the electron beam that return to the electron resistant layer after reflection by the substrate.

Anti-electron reflector arrangement

A tapping mode atomic force microscope includes a sinusoidal signal generator. The sinusoidal signal generator generates sinusoidal wave signals to a modulating laser diode for outputting a pulsed laser beam. The laser beam reflects from the back side of a photo detector and then a current signal with a corresponding intensity is output b y the photo detector. Then, the signal is converted by a current to voltage converter and then is operated by a differential amplifier. After the DC component and the undesired multiple frequency harmonics of the current signal is filtered by a band pass filter, the current signal is processed by a demodulation circuit and a low pass filter to produce a voltage value corresponding to probe deformation. After inputting this voltage value to a Z-axis servo controller, a corresponding control command is acquired based on a control algorithm so as to keep the value of the probe deformation constant. If the position of the Z-axis is recorded at a specific time point and all the data are collected, the surface profile of the test sample can be obtained.

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Hsinchu, Taiwan

Hsi-Hsiang Lin