Mosel Vitelic Corporation

Hsi-Chieh Chen

Champion Yi

Pei-Jan Wang

Guan-Jiun Yi

Yeong-Ruey Shiue

Wen-Cheng Tu

Kuo-Lun Tseng

A method for forming a tungsten plug is disclosed herein. A TiSi.sub.2 layer is selectively formed in a contact hole by using chemical vapor deposition. Then, a TiN layer is formed on the surface of the contact hole and on the TiSi.sub.2 layer. Next, a tungsten layer is formed on the TiN layer and in the contact hole. A CMP is used to remove a portion of the tungsten layer and TiN layer for planarization.

Method of forming a tungsten-plug contact for a semiconductor device

A method for forming a metal plug is provided. The method includes: a) forming a metal contact window in a substrate having an oxide layer; b) forming a barrier layer over a top surface of the oxide layer and a wall defining the metal contact window; c) forming a metal layer covering the barrier layer and filling up the metal contact window; d) removing a portion of the metal layer located above the barrier layer covering the top surface of the oxide layer by a chemical mechanical polishing method; and e) removing the barrier layer covering the top surface of the oxide layer by an etching method.

Method for forming metal plug

Growing community of inventors

Hsinchu, Taiwan

Hsi-Chieh Chen