Winbond Electronics Corporation

Hsaio-Yu Lin

Bo-Lun Wu

Kao-Tsair Tsai

Ting-Ying Shen

Tso-Hua Hung

Memory devices are provided. The memory device includes a substrate. A dielectric layer is disposed on the substrate and a plurality of resistive memory cells is disposed on the dielectric layer. Each resistive memory cell includes a via disposed in a first opening of the dielectric layer. A conductive layer is disposed on the via. The memory device further includes a capacitor structure including a bottom electrode, a variable resistance layer disposed on the bottom electrode and a top electrode disposed on the variable resistance layer, wherein the bottom electrode is disposed on the conductive layer.

Growing community of inventors

Hsinchu County, Taiwan

Hsaio-Yu Lin