Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsaio-Chun Chang

Guan-Jie Shen

The present disclosure describes a semiconductor device having a buried gate structure. The semiconductor device includes a substrate and a fin structure on the substrate. The fin structure includes a top portion and a bottom portion. The semiconductor device further includes a gate structure on the bottom portion of the fin structure. Multiple semiconductor layers in the top portion of the fin structure are disposed on the gate structure. The semiconductor device further includes a source/drain structure above the gate structure and in contact with the multiple semiconductor layers.

Growing community of inventors

Hsinchu County, Taiwan

Hsaio-Chun Chang