Tokyo Electron Limited

Hoyoung Kang

Anton J deVillers

Gerrit J Leusink

Corey Lemley

Richard Farrell

Daniel J Fulford

Ronald W Nasman

Rodney Lee Robison

Lars W Liebmann

Daniel Chanemougame

Jeffrey Smith

Kandabara N Tapily

David L O'Meara

Cory Wajda

Anthony R Schepis

Aspects of the disclosure provide a method for fabricating a semiconductor device. The method includes forming dummy power rails on a substrate by accessing from a first side of the substrate that is opposite to a second side of the substrate. Further, the method includes forming transistor devices and first wiring layers on the substrate by accessing the first side of the substrate. The dummy power rails are positioned below a level of the transistor devices on the first side of the substrate. Then, the method includes replacing the dummy power rails with conductive power rails by accessing from the second side of the substrate that is opposite to the first side of the substrate.

Replacement buried power rail in backside power delivery

An apparatus for depositing films on a backside of a substrate includes a processing chamber and a substrate support having an annular support surface. A first gas distribution unit includes a plurality of gas delivery openings arranged along the backside surface of the substrate and configured to direct plasma deposition gas to the backside surface. A second gas distribution unit is configured to flow a second gas into the processing chamber such that the front side surface of the substrate is exposed to the second gas. A controller is configured to control flow of the plasma deposition gas from the first gas distribution unit, flow of the second gas from the second gas distribution unit a vacuum system. The controller maintains a gas pressure differential between the front side surface and the backside surface of the substrate sufficient to prevent passage of the deposition gas from the backside surface.

System for backside deposition of a substrate

Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.

A method of processing a substrate includes forming a channel through a substrate, depositing a layer of polycrystalline silicon on sidewalls of the channel, and oxidizing uncovered surfaces of the polycrystalline silicon with an oxidation agent. The oxidizing agent causes formation of an oxidized layer, the oxidized layer having a uniform thickness on uncovered surfaces of the polycrystalline silicon. The method includes removing the oxidized layer from the channel with a removal agent, and repeating steps of oxidizing uncovered surfaces and removing the oxidized layer until removing a predetermined amount of the layer of polycrystalline silicon.

Cyclic self-limiting etch process

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

Method for globally adjusting spacer critical dimension using photo-active self-assembled monolayer

An apparatus and method for uniformly holding a substrate without flexure or bending of the substrate, thereby enabling accurate shape measurements of the substrate such as wafer curvature, z-height values and other surface characteristics. Techniques include using a liquid as a supporting surface for a substrate thereby providing uniform support. Liquid used has a same specific gravity of a substrate being supported so that the substrate can float on the liquid without sinking. Uniform support of the substrate enables precision metrology.

Substrate holding apparatus and method for shape metrology

Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes forming a first material in a first annular region of the front side surface, resulting in the first annular being coated with the first material. The first annular region is immediately adjacent to a perimeter of the substrate. The first annular region has a first outer perimeter proximate to the perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate. The method also includes forming a second material in an interior region of the front side surface, the second material coating the front side surface without adhering to the annular region.

Method and system for prevention of metal contamination by using a self-assembled monolayer coating

Methods and systems for imprint lithography are described. In an embodiment, a method may include receiving a substrate in an imprint lithography chamber. Such a method may also include applying a deformable layer to a surface of the substrate. The method may further include injecting a gas that dissolves into the deformable layer more quickly than air into the chamber. Additionally, the method may include pressing a mold into the deformable layer. The method may also include controlling one or more processing parameters in order to achieve device formation objectives.

Fast imprint lithography

Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

Systems and methods for inhibiting detectivity, metal particle contamination, and film growth on wafers

A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.

Back-side friction reduction of a substrate

Methods and systems for coating a substrate with a fluid are described. In an embodiment, a method may include receiving a substrate in a substrate processing unit, the substrate having one or more physical features formed on a surface of the substrate. The method may include introducing a gas into an environment of the surface of the substrate. Additionally, the method may include applying a fluid to the surface of the substrate, wherein the gas facilitates distribution of the fluid relative to the one or more physical features formed on the surface of the substrate. The method may further include controlling one or more processing parameters related to distribution of the fluid in order to achieve device formation objectives.

Methods and systems for coating a substrate with a fluid

A process is disclosed for wetting a filter cartridge used to treat a liquid solvent used in semiconductor manufacture. In the process, a filter cartridge having void spaces wherein the void spaces contain residual gas from the manufacturing process used to make the filter cartridge is connected to a source of purging gas. The purging gas is flowed through the filter cartridge to at least partially displace at least a portion of the residual gas from the manufacturing process used to make the filter cartridge. Next, liquid solvent is pumped through the filter cartridge so that the purging gas dissolves into the liquid solvent and to at least partially fill the void spaces to thereby at least partially wet out the filter cartridge with the liquid solvent.

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Guilderland, NY, United States of America

Hoyoung Kang