Ultradots, Inc.

Howard Wing Hoon Lee

William Pfenninger

Alan Hap Chin

Majid Keshavarz

Bingshen Gao

The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free such that the quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.

Quantum dots of group IV semiconductor materials

The invention relates to an optical device. The optical device comprises a waveguide core and a nanocomposite material optically coupled to the waveguide core. The nanocomposite material includes a plurality of quantum dots. The nanocomposite material has a nonlinear index of refraction &#x3b3; that is at least 10cm/W when irradiated with an activation light having a wavelength &#x3bb; between approximately 3&#xd7;10cm and 2&#xd7;10cm.

Optical devices with engineered nonlinear nanocomposite materials

The invention provides 'engineered' nonlinear nanocomposite materials with an extremely large &#x3c7;and fast temporal response along with optical properties that can be precisely tuned to satisfy the requirements of a particular application (e.g., optical, thermal, mechanical, etc.). In particular, the magnitude of the linear and nonlinear index of refraction can be adjusted substantially independently of the absorption spectrum of the material. In addition, the optical characteristics can be engineered substantially independently from the mechanical and chemical characteristics, providing exceptional performance and flexibility in terms of device-incorporation and process-stability.

Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods

The invention relates to an optical device. The optical device comprises a waveguide core and a nanocomposite material optically coupled to the waveguide core. The nanocomposite material includes a plurality of quantum dots. The nanocomposite material has a nonlinear index of refraction &ggr; that is at least 10 cm /W when irradiated with an activation light having a wavelength &lgr; between approximately 3&times;10 cm and 2&times;10 cm.

The invention relates to a method of forming a quantum dot. A particle that includes a semiconductor material Y selected from the group consisting of Si and Ge is provided. Sound energy and light energy is applied to the particle to form a quantum dot. The quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent. The quantum dot includes a core, and the core includes Y.

Methods of forming quantum dots of Group IV semiconductor materials

The invention relates to a nanocomposite material. The nanocomposite material comprises a matrix material and a plurality of quantum dots dispersed in the matrix material. The nanocomposite material has a nonlinear index of refraction &ggr; that is at least 10 cm /W when irradiated with light having a wavelength &lgr; between approximately 3&times;10 cm and 2&times;10 cm.

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Fremont, CA, United States of America

Howard Wing Hoon Lee