Iqe Plc

Howard Williams

Rodney Pelzel

Michael S Lebby

Andrew C Clark

Rytis Dargis

Patrick Chin

Robert Yanka

Seokjae Chung

Kalyan Nunna

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein. A semiconductor can include a substrate with a lattice parameter matching or nearly matching GaAs and a first doped III-V layer over the substrate. The semiconductor can also include an absorber layer over the first doped III-V layer, the absorber layer having a bandgap between approximately 0.7 eV and 0.95 eV and a carrier concentration less than approximately 1&#xd7;10cmat room temperature. The semiconductor can also include a second doped III-V layer over the absorber layer.

Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs

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Howard Williams