USA as Represented by Secretary of the Navy

Leidos, Inc.

Other

Dynamics Research Corporation

Howard W Walker

Stephen Douglas Russell

Richard Holmes Griffey

Paul R De La Houssaye

Jamie K Pugh

Dennis E Amundson

William Pugh

Newell Convers Wyeth

Graham A Garcia

Eric Noel Cartagena

John Paul Ziegler

George P Imthurn

Randy L Shimabukuro

Douglas A Sexton

Charles A Walker

Shannon D Kasa

Scott Stewart

A system and process for interfering with the flight of one or more unmanned aerial vehicles (UAVs) includes aiming a deployment device in a direction of the one or more UAVs and deploying by the deployment device a package in the direction of the one or more UAVs. The package includes a fiber material consisting of multiple individual fibers formed of one or more biodegradable materials. When the fiber material is released from the package after deployment, it forms a cloud of multiple individual fibers and the cloud of multiple individual fibers physically interferes with a propeller system of the one or more UAVs, thus causing the one or more UAVs to lose the ability to remain aloft.

Fibrous occlusive interruption of lift

Marine vessel propulsor occlusion systems and devices made of novel fabrics formed from biodegradable and/or dissolvable materials, and methods of manufacturing and using the same are disclosed. The propulsor occlusion devices can slow and/or incapacitate a marine vessel without serious injury to occupants and without destroying the vessel's propulsion system.

Material for propeller occlusion of marine vessels

A stacked luminescent solar concentrator includes two separate absorption/emission cells, each having a layer of luminophore-type material, wherein a top layer is a high band gap layer comprised of quantum dots in polymer, wherein the quantum dots are engineered so as to absorb a significant percentage of photons above bandgap. The bottom layer is a lower band gap layer comprised of quantum dots in polymer, wherein the quantum dots in the second layer are engineered so as to absorb photons not absorbed in the top layer, thus increasing total percentage of absorbed photons. Photovoltaic cells are located below the layers at the bottom of the cells or at the edges of the cells. The sides and lower surfaces of the cells may include reflective surfaces as discussed further herein. Reflection losses from the top surface thereof may be minimized using a broadband anti-reflective coating (AR) on the surface.

Luminescent solar concentrator

A microsensor array system, comprising a pad, a plurality of actuators attached to the pad, and a plurality of microprobes, wherein substantially each microprobe in the plurality of microprobes is attached to a respective actuator in the plurality of actuators.

Microsensor array system

One embodiment is a microprobe. An example of the microprobe comprises a housing having an aperture. This example of the microprobe also comprises an ISFET attached to the housing. The ISFET may have a gate located proximate the aperture. This example of the microprobe further comprises a reference electrode attached to the housing proximate the aperture. Another embodiment is a microsensor system. Another embodiment is a method for measuring a characteristic of tissue. Yet another condition embodiment is a method for monitoring tissue pH.

Microsensor system and method for measuring data

One embodiment is a microprobe. An example of the microprobe comprises a housing having an aperture. This example of the microprobe also comprises an ISFET attached to the housing. The ISFET may have a gate located proximate the aperture. This example of the microprobe further comprises a reference electrode attached to the housing proximate the aperture. Another embodiment is a microsensor system. Another embodiment is a method for measuring a characteristic of tissue. Yet another embodiment is a method for monitoring tissue pH.

An ion-sensitive sensor has an active layer of silicon with source and drain diffusion regions of a field-effect transistor formed therein, patterned layers of silicon oxide and metal on one side of the active silicon layer, and a layer of insulative support material on the metal and silicon oxide layers. A continuous layer of silicon oxide on the other side of the active silicon layer has an exposed surface in the region of the field-effect transistor so that surface charge is formed in the exposed area of the continuous silicon oxide layer when placed in contact with an electrolyte solution. The surface charge induces a channel in the undiffused channel region between the source and drain regions, enabling the flow of current between source and drain contacts under proper bias conditions. The sensor is fabricated by a process that begins with the formation of a field-effect transistor on an active silicon layer of a silicon-on-insulator (SOI) wafer, and the subsequent formation of an insulative support layer over the active silicon layer. The substrate silicon of the SOI wafer is then removed, either by chemical or mechanical means, to expose the buried silicon oxide layer of the SOI wafer. The exposed oxide may form the ion-sensitive surface of the sensor, or additional modification treatment may be done to improve various characteristics of the sensing surface.

Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface

A method for forming a uniform cavity between electrode substrates of a dlay comprises the steps of patterning a border to define a display area between the electrode substrates, patterning electrode spacers between the electrode substrates, and wafer bonding the electrode substrates to the border and to the electrode spacers to form a uniform cavity within the display area. A cavity comprises a pair of substrates enclosing the cavity and patterned spacers wafer bonded to the substrates to form and maintain a uniform thickness of the cavity.

Cavity uniformity having patterned spaces of aluminum oxide or silicon

A chemical sensor couples a material that changes temperature in response to a chemical condition with an oscillator. The oscillator is coupled to the material to detect the change in temperature in the material so that the frequency of the oscillator changes in correspondence with the change in temperature as an indication of the chemical condition.

Ring oscillator based chemical sensor

A method is described for fabricating a complementary, vertical bipolar sconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ silicon island by epitaxially growing an N-type silicon layer on the N+ silicon island. Then, a P region is created in the N-type silicon layer. An N+ region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P+ silicon island. Then, an N region is created in the P-type silicon layer. A P+ region created in the N region completes the PNP junction device.

Complementary vertical bipolar junction transistors formed in

A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ silicon island by epitaxially growing an N-type silicon layer on the N+ silicon island. Then, a P region is created in the N-type silicon layer. An N+ region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P+ silicon island. Then, an N region is created in the P-type silicon layer. A P+ region created in the N region completes the PNP junction device.

Method for fabricating complementary vertical bipolar junction

A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.

Low and high minority carrier lifetime layers in a single semiconductor

Method for forming low and high minority carrier lifetime layers in a

A method of bonding silicon to sapphire may be performed at room temperature and with no greater pressure than that due to one wafer resting on another. The method comprises the steps of polishing one side of a flat sapphire wafer to a mirror-like surface; polishing one side of a flat silicon wafer to a mirror-like surface; cleaning the wafers and then stacking the wafers so that their corresponding mirror-like surfaces contact. The room temperature bonding that occurs is relatively strong, and the bonded wafers can be handled without danger of their becoming unbonded. If desired, the bonded wafers may be subjected to further processing to further strengthen their bond.

Growing community of inventors

San Diego, CA, United States of America

Howard W Walker