Intel Corporation

Huawei Technologies Co., Limited

Howard S David

Eugene Gorbatov

Ulf Hanebutte

James W Alexander

Michael W Williams

Narendra S Khandekar

Michael J McTague

Kuljit Singh Bains

Hongzhong Zheng

Rahul Khanna

Christopher E Cox

David Wyatt

David Stewart Dunning

Gang Zhao

Yongyao Li

Suneeta Sah

Minh T Le

Joseph M Nardone

Xusheng Liu

Rajat Agarwal

Stephen S Pawlowski

Bill Nale

Peter D MacWilliams

Devadatta V Bodas

James M Dodd

Sivakumar Radhakrishnan

Eric Dahlen

John F Zumkehr

Asit K Mishra

Warren Morrow

Son H Lam

Edward R Stanford

Udayan Mukherjee

Orville H Christeson

Sandeep K Jain

William Dawson Kesling

William Harry Nale

Klaus J Ruff

Raman Nayyar

Rami A Naqib

Jayamohan Dharanipathi

John L Bryan

David M Cowan

Ulf R Hanebutte

A method for bit error rate testing a processing unit using a bit error rate tester (BERT) includes transmitting a signal pair to a receiver of the processing unit, the signal pair having jitter levels complying with a jitter threshold, tuning the signal pair to obtain a first stressed eye measurement for the receiver, wherein the first stressed eye measurement complies with a stressed eye mask, placing the processing unit into a loop-back mode, wherein data transmitted to the processing unit by the BERT is transmitted back to the BERT, transmitting a data pattern to the processing unit, receiving a looped back version of the data pattern from the processing unit, and calculating a bit error rate in accordance with the data pattern and the looped back version of the data pattern.

System and method for receiver equalization and stressed eye testing methodology for DDR5 memory controller

According to some embodiments, a method and apparatus are provided to receive a first data burst associated with a first data line and a second data burst associated with a second data line, determine a first one or more stuff bits to be transmitted after the first data burst and a second one or more stuff bits to be transmitted after the second data burst, and output data comprising the first data burst and the first one or more stuff bits and the second data burst and the second one or more stuff bits.

Stuffing bits on a memory bus between data bursts

In one embodiment, the present invention includes a power manager to receive a memory power usage value, to determine an available power based at least in part on a power budget and the memory power usage value, and to change a memory power state based at least in part on the available power, wherein the memory power state comprises a memory frequency and a memory voltage. Other embodiments are described and claimed.

Method and apparatus to limit memory power

A method and system to improve the operations of a registered memory module. In one embodiment of the invention, the registered memory module allows asynchronous read and write operations when a clock circuit in the registered memory module is being activated. In another embodiment of the invention, the registered memory module allows enabling or disabling of its clock circuit without any interruption of its operation. When the clock circuit in the registered memory module is disabled, the power consumption of the registered memory module can be reduced. In yet another embodiment of the invention, the registered memory module is allowed to enter or exit an asynchronous operation mode without entering or exiting a self-refresh or pre-charge power down operation mode of the registered memory module.

Method and system to improve the operations of a registered memory module

Described herein are techniques for dynamic memory frequency/voltage scaling to augment existing memory power management techniques and further improve memory power efficiency. Each operating point is defined as an operational state for the memory.

Memory power management via dynamic memory operation states

Memory power estimation by means of calibrated weights and activity counters are generally presented. In this regard, in one embodiment, a memory power is introduced to read a value from a memory activity counter, to determine a memory power estimation based at least in part on the value and a calibration, and to store the memory power estimation to a register. Other embodiments are also described and claimed.

Memory power estimation by means of calibrated weights and activity counters

Methods and apparatuses for adaptive memory operational state management. A memory performance parameter is determined for at least a portion of a memory system. The memory performance parameter is compared to one or more threshold values. An operating frequency of the memory system can be modified based on results of the comparison of the memory performance parameter and the one or more threshold values.

Adaptive memory frequency scaling

In some embodiments, a chip includes a scheduler, transmitters, receivers, and control circuitry. The schedule schedules signals to be transmitted outside the chip and the transmitters transmit the scheduled signals outside the chip. The receivers receive signals including signals with temperature information related to a temperature outside the chip. The control circuitry selectively limit a number of commands that can be scheduled within a series of smaller windows while checking the temperature information near the conclusion of a larger window comprising many smaller windows. Other embodiments are described.

Power management using adaptive thermal throttling

A method, device, and system are disclosed. In one embodiment the method includes grouping multiple memory requests into multiple of memory rank queues. Each rank queue contains the memory requests that target addresses within the corresponding memory rank. The method also schedules a minimum burst number of memory requests within one of the memory rank queues to be serviced when the burst number has been reached in the one of the plurality of memory rank queues. Finally, if a memory request exceeds an aging threshold, then that memory request will be serviced.

Memory rank burst scheduling

In one embodiment, the present invention includes a method determining if an access queue associated with a channel of a memory has been empty for a predetermined time period and if so, de-asserting a clock enable signal for all ranks of the channel of the memory, otherwise providing a next memory access request from the access queue to the channel of the memory. Other embodiments are described and claimed.

Coarsely controlling memory power states

A method, device, and system are disclosed. In one embodiment, the method includes programming a first On Die Termination (ODT) value into a first plurality of dynamic random access memory (DRAM) devices. The first plurality of DRAM devices are located on a dual inline memory module (DIMM). Additionally, the method also includes programming a second ODT value into a second plurality of additional DRAM devices. The second plurality of additional DRAM devices are also located on the DIMM. The method also specifies that the first and second ODT values are not the same value.

Multiple address outputs for programming the memory register set differently for different DRAM devices

In some embodiments the continuous measuring of temperature in remote memory devices operating within an electrically noisy environment is facilitated by coordinating the progressive approximation of temperature within quiescent periods of non-activity as known by a memory controller.

Temperature sampling in electronic devices

Embodiments of the invention supply power to DRAM or other memory devices with a multi-phase voltage regulator. A power controller coupled to the multi-phase voltage regulator causes one or more phases of the multi-phase voltage regulator to be activated or deactivated (shed) according to predetermined criteria. Embodiments of the invention thus improve power management by providing one or more reduced power states for the memory devices. Other embodiments are described.

System and method for memory phase shedding

Growing community of inventors

Portland, OR, United States of America

Howard S David