Advanced Silicon Materials LLC

Hm3 Energy, Inc.

Hm Energy LLC

Howard J Dawson

David W Keck

William C Breneman

Hiroshi Morihara

Ronald O Russell

Andrew J Green

Richard F Palmer

Henry Dare Wood

David T Carter

John Peter Hill

Dave Carter

Jay Curtis Nelson

William John Juhasz, Jr

Mary McSwain

A method is disclosed for producing a mechanically stable, energy dense and water-resistant biomass product. By utilizing a unique two-step heating process in combination with mechanical compression, the resulting biomass product retains its physical shape and strength after immersion in ambient water for many hours. The treatment is effective for a variety of cellulosic biomass materials including forest slash wood.

Method for producing a water-resistant, compressed biomass product

Disclosed herein is a binder-free product and process for making the product. The product is a mechanically stable, water resistant torrefied biomass product that does not comprise an extrinsic binder additive. The product is made using a combination of appropriate pre-treatment steps and compressing the conditioned biomass feedstock into a thermally managed compaction device comprising at least one modified die. The modified die allows for differential cooling/heating modifications so as to control the temperature near the entrance to the compaction device and passing the formed torrefied biomass into a post-formation curing zone.

Method and process for producing a water-resistant, mechanically stable form of torrefied biomass

A manufacturing process is disclosed for preparing torrefied biomass having a reduced inorganic content which comprises passing crude torrefied biomass through one or more selective separation devices capable of separating inorganic particulate matter from the torrefied biomass.

Refined torrefied biomass

A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.

Rod replenishment system for use in single crystal silicon production

Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the &ldquo;skin effect.&rdquo;

Chemical vapor deposition system for polycrystalline silicon rod production

Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current is provided to the rods by a power supply, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, to concentrate at least 70% of the current in an annular region that is the outer 15% of a rod due to the &ldquo;skin effect.&rdquo;

Growing community of inventors

Anacortes, WA, United States of America

Howard J Dawson