Motorola Corporation

Howard D Knuth

John K Frei

Michael J Anderson

Bruce R Tegge

Frederick Y Cho

Donald Eugene Allen

Wayne D Pasco

Richard A Gross

An apparatus (105, 301) for enclosing a microfabricated component (225) includes a package base (120, 405, 910), a package lid (110, 510, 950) and a seal (215) coupled to the package base (120, 405, 910) and to the package lid (110, 510, 950). The apparatus (105, 301) further includes a conductive loop (210, 610, 920) thermally coupled to the seal (215). Electrical energy is supplied to the conductive loop (210, 610, 920) to heat the conductive loop (210, 610, 920) and seal (215) to melt the seal (215) and thereby to seal the package base (120, 405, 910) to the package lid (110, 510, 950), providing a sealed environment for the microfabricated component (225).

Resistance heated, sealed microfabricated device package method and

A stepped via is formed in a circuit board. Large holes are punched in a predetermined pattern in two insulating sheets and small holes are punched in the same pattern in another insulating sheet. The holes are dimensioned so that their diameters are larger than the thicknesses of their respective sheets. However, the diameters of the larger holes are less than the combined thickness of all sheets. The sheets are juxtaposed so that the sheet with the smaller holes is between the other sheets and corresponding holes from the respective sheets are aligned. The sheets are pressed together to form an integral substrate. Metallization is applied from one side of the substrate, then metallization is applied to the substrate from the other side.

Circuit board having stepped vias

A monolithic circuit, such as a piezoelectric device, semiconductor, or the like, may be fabricated by forming an operational metallization layer (12) on a substrate (10). A subsequent layer (40), such as a sealing ring pattern (42) may then be applied using a thin film deposition technique. A thin film material is applied through a mask assembly (28). The mask assembly (28) includes a mask material (30) that has been applied to a screen (24) and patterned as desired. The mask material (30) extends beyond the screen (24) so that only the mask material contacts the substrate (10) during thin film deposition. Preferably, the screen (24) is woven from individual wires (26) having circular cross-sectional shapes. The subsequent layer (40) is applied both through perforations (18) in the screen (24) and under the screen's wires (26).

Monolithic circuit fabrication method

A reinforced wrap around ground and method includes a substrate, including opposite first and second substrate surfaces separated by a substrate edge. A first metalization layer is coupled to the first substrate surface and a second metalization layer comprising an electrical ground, is coupled to the second substrate surface. An electrical ground reinforcement is coupled between the first metalization layer and the second metalization layer around the substrate edge. Conductive paste coats the electrical ground reinforcement, and the conductive paste is fired to bind the wrap around ground to the substrate and to electrically ground the first metalization layer to the second metalization layer through the electrical ground reinforcement and the conductive coating.

Reinforced wrap around ground and method

A semiconductor assembly which includes a carrier and a semiconductor die is mounted on a printed wiring board. The die includes a top active surface and a bottom active surface. The two active surfaces are non-coplanar. The carrier is made from layers of a ceramic material. Holes are formed through all but one of the layers. The layers are laminated into an integral substrate, and the substrate is fired. The holes form a cavity into but not through the substrate. The number of layers, lamination pressures, and firing parameters are all adjusted in response to the thickness of the die to insure that the height of cavity walls approximately equals the thickness of the die. Continuous metallization is applied in the cavity and on a top surface of the substrate. The die is bonded in the cavity, and conductive bumps are formed on the die and the metallization.

Leveled non-coplanar semiconductor die contacts

A method is disclosed for the fabrication of an air supported crossover bridge which consists of a polyimide coating being set over the metalized device. Then, supports are defined for the crossover and the crossover is added. Once the crossover has been added the excess is removed and the polyimide layer is removed leaving the air supported bridge.

Growing community of inventors

Tempe, AZ, United States of America

Howard D Knuth