Xiamen Sanan Integrated Circuit Co., Ltd.

Houng-Chi Wei

Wenbi Cai

Chih-Hung Yen

Bing-Han Chuang

Tsung-Te Chiu

Kechuang Lin

Chia-Chu Kuo

An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InGaAsN, in which 0<x≤0.2, and 0≤y≤0.035, and when y is not 0, x=3. The second base layer is made of a material InGaAs, in which 0.03≤m≤0.2. The emitter unit is formed on the second base layeropposite to the first base layer, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Epitaxial structure and transistor including the same

A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Backside metallized compound semiconductor device and method for manufacturing the same

A method for manufacturing a backside metalized compound semiconductor wafer includes the steps of: providing a compound semiconductor wafer; attaching the compound semiconductor wafer to a supporting structure; forming an adhesion layer including nickel and vanadium on a back surface of the compound semiconductor wafer; forming an alloy layer including titanium and tungsten on the adhesion layer; forming a metallization layer including gold on the alloy layer; and removing the supporting structure from the compound semiconductor wafer to obtain the backside metalized compound semiconductor wafer.

Growing community of inventors

Fujian, China

Houng-Chi Wei