Samsung Electronics Co., Ltd.

Harvard College

Houk Jang

Hyeonjin Shin

Donhee Ham

Haeryong Kim

Minhyun Lee

Henry Julian Hinton

Yeonchoo Cho

Renjing Xu

Chengye Liu

Dovran Amanov

Changhyun Kim

A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.

Nonvolatile memory device and operating method of the same

Disclosed is a neural computer including an image sensor capable of controlling a photocurrent. The neural computer according to an embodiment includes a preprocessor configured to receive an image and generate a feature map for the received image; a flattening unit configured to transform the feature map generated by the preprocessor into tabular data to provide data output; and an image classifier configured to classify images received through the preprocessor by using the data output by the flattening unit as an input value. The preprocessor includes an optical signal processor configured to receive the image and generate the feature map.

Neural computer including image sensor capable of controlling photocurrent

Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.

Memristor and neuromorphic device comprising the same

Growing community of inventors

Cambridge, MA, United States of America

Houk Jang