Sony Corporation

Houjin Huang

Masashi Shiraishi

Hisashi Kajiura

Shigeaki A Wachi

Dharam Pal Gosain

Masafumi Ata

Koji Kadono

Ryuichiro Maruyama

Atsuo Yamada

Mitsuaki Miyakoshi

A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate () made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (). The heat distribution () is formed, for example, through diffracting an energy beam () by a diffraction grating (). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.

Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

A method for destruction of metallic carbon nanotubes is provided. The method includes irradiating a mixture of semiconducting carbon nanotubes and metallic carbon nanotubes with energy beams (such as laser light), thereby selectively destroying metallic carbon nanotubes or semiconducting carbon nanotubes. The energy beams have energy components for resonance absorption by the metallic carbon nanotubes or semiconducting carbon nanotubes.

Method for destruction of metallic carbon nanotubes, method for production of aggregate of semiconducting carbon nanotubes, method for production of thin film of semiconducting carbon nanotubes, method for destruction of semiconducting carbon nanotubes, method for production of aggregate of metallic carbon nanotubes, method for production of thin film of metallic carbon nanotubes, method for production of electronic device, method for production of aggregate of carbon nanotubes, method for selective reaction of semiconducting carbon nanotubes

Carbon nanotube, method for positioning the same, field effect transistor made using the carbon nanotube, method for making the field-effect transistor, and a semiconductor device are provided. The carbon nanotube includes a bare carbon nanotube and a functional group introduced to at least one end of the bare carbon nanotube.

Method for making field-effect transistor using carbon nanotube

An arc electrode structure, for producing carbon nanostructures, which includes a first electrode and two or more second electrodes disposed within a chamber is provided. The electrodes are connected to a voltage potential to produce an arc-plasma region. The first electrode has a sloped surface with a plurality of holes therein for holding catalyst. The first electrode's sloped surface, and the positioning of the plurality of second electrodes allows control of the direction and region of arc-plasma. Further, the first electrode has a central bore which may be either a blind bore, or a through bore. The blind bore collects unwanted deposits that slide off of the sloped surface of the first electrode. The throughbore either allows soot and carbon nanostructures to be removed from the chamber, or allows organic vapor to be introduced into the chamber. When the throughbore is used to introduce organic vapor into the chamber, the vapor is directed through the arc-plasma region so that carbon nanostructures are built up by a CVD process rather than being broken off of carbon electrodes.

Arc electrodes for synthesis of carbon nanostructures

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Kanagawa, Japan

Houjin Huang