Taiwan Semiconductor Manufacturing Comp. Ltd.

Hou-Ju Huang

Szu-Wei Lu

Tsung-Fu Tsai

Shih-Ting Lin

Hung-Wei Tsai

Jing-Cheng Lin

Feng-Cheng Hsu

A semiconductor device includes a semiconductor die and a conductive structure disposed side-by-side and spaced apart from each other through an insulating encapsulant. The conductive structure includes a first conductor laterally covered by the insulating encapsulant, and a second conductor disposed over and separating from the first conductor. The second conductor includes a first portion laterally covered by the insulating encapsulant and a second portion protruded from the insulating encapsulant, where a ratio of a first standoff height of the first portion and a second standoff height of the second portion ranges from about 0.4 to about 1.5.

Electronic device and manufacturing method thereof

An electronic device and a manufacturing method thereof are provided. The method includes at least the following steps. An insulating encapsulant is formed to encapsulate a multi-layered structure and a semiconductor die, where the multi-layered structure includes a first conductor, a diffusion barrier layer on the first conductor, and a metallic layer on the diffusion barrier layer, and the insulating encapsulant at least exposes a portion of the semiconductor die and a portion of the first conductor. A redistribution structure is formed over the insulating encapsulant, the semiconductor die, and the first conductor. The metallic layer is removed to form a recess in the insulating encapsulant. A second conductor is formed in the recess over the diffusion barrier layer, where the first conductor, the diffusion barrier layer, and the second conductor form a conductive structure that is electrically coupled to the semiconductor die through the redistribution structure.

Package-on-package (POP) electronic device and manufacturing method thereof

An electronic device and the manufacturing method thereof are provided. The electronic device includes a semiconductor die, a conductive structure electrically coupled to the semiconductor die, an insulating encapsulant encapsulating the semiconductor die and the conductive structure, and a redistribution structure disposed on the insulating encapsulant and the semiconductor die. The conductive structure includes a first conductor, a second conductor, and a diffusion barrier layer between the first conductor and the second conductor. The redistribution structure is electrically connected to the semiconductor die and the first conductor of the conductive structure.

An embodiment is a structure comprising a package, a substrate, and external electrical connectors mechanically and electrically coupling the package to the substrate. The package contains a die. The external electrical connectors are between the package and the substrate. An underfill material is around a periphery region of the package and between the periphery region and the substrate. A gap is between a central region of the package and the substrate, and does not contain the underfill material. The underfill material may seal the gap. The gap may be an air gap. In some embodiments, the underfill material may fill greater than or equal to 10 percent and no more than 70 percent of a volume between the package and the substrate.

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Hsinchu County, Taiwan

Hou-Ju Huang