Tokyo Electron Limited

Hotaka Ishizuka

Mitsuhiro Tachibana

Tsukasa Matsuda

Kazuya Okubo

Kohichi Sato

Cheng Fang

A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.

Method of forming tungsten film

In a deposition method according to the present invention, a substrate () is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiHgas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST). By carrying out the initiation step (ST) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.

Method for forming film

A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film ( ) on a surface of a workpiece by a vacuum processing system ( ) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains ( ) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.

Tungsten film forming method

A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (,) on a surface of a workpiece by a vacuum processing system (,) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (,) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.

Growing community of inventors

Yamanashi, Japan

Hotaka Ishizuka