Samsung Electronics Co., Ltd.

HoSung Roh

Kwangho Kim

Hyungjong Ko

Hojin Park

JinHyuk Jeung

Sun-kyu Lee

Exemplary embodiments disclose a semiconductor device which includes a function block including a plurality of transistors; a temperature detector configured to detect a driving temperature of the function block in real time; and an adaptive body bias generator configured to provide a body bias voltage to adaptively adjust leakage currents of the transistors according to the detected driving temperature, wherein the adaptive body bias generator is further configured to generate a body bias voltage corresponding to a predetermined minimum leakage current according to the driving temperature.

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Suwon-si, South Korea

HoSung Roh