Samsung Electronics Co., Ltd.

Hose Choi

Hongsoo Kim

Boram Im

Hyunju Sung

Jongkook Park

An integrated circuit memory device includes a plurality of row selection transistors and a dummy row selection transistor, on a substrate. A plurality of word lines and a plurality of dummy word lines are also provided on the substrate. A plurality of memory cells are provided, which are electrically connected to corresponding ones of the plurality of word lines. A plurality of dummy memory cells are provided, which are electrically connected to corresponding ones of the plurality of dummy word lines. A first wiring structure is provided, which electrically connects a first one of the plurality of word lines to a first one of the plurality of row selection transistors, and a second wiring structure is provided, which electrically connects the plurality of dummy word lines together and to the dummy row selection transistor.

Growing community of inventors

Seongnam-si, South Korea

Hose Choi