Infineon Technologies Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Sony Corporation

Intel Mobile Communications Gmbh

Infineon Technologies Dresden Gmbh & Co. Kg

Infineon Technoloiges Ag

Horst Theuss

Klaus Elian

Jochen Dangelmaier

Rainer Markus Schaller

Stefan Kolb

Alfons Dehe

Albert Auburger

Helmut Wietschorke

Mathias Vaupel

Thomas Mueller

Franz Jost

Gottfried Beer

Guenther Ruhl

Adolf Koller

Michael Weber

Bernhard Winkler

Bernd Stadler

Joachim Mahler

Georg Meyer-Berg

Markus Loehndorf

Edward Fuergut

Rainer Leuschner

Manfred Mengel

Khalil Hosseini

Matthias Eberl

Stefan Paulus

Franz-Peter Kalz

Cyrus Ghahremani

Thorsten Meyer

Juergen Hoegerl

Alexander Heinrich

Gerald Ofner

Volker Strutz

Irmgard Escher-Poeppel

Ulrich Krumbein

Stephan Bradl

Peter Scherl

Bernhard Knott

Jakob Jongsma

Stefan Miethaner

Stephan Schmitt

Dirk Hammerschmidt

Ralf Otremba

Jens G Pohl

Josef Hoeglauer

Helmut Strack

Simon Jerebic

Christoph Steiner

Frank Daeche

Manfred Fries

Daniel Kehrer

Klaus Pressel

Reinhard Ploss

Ralf Wombacher

Terje Kvisteroey

Andreas Meckes

Georg Ernst

Udo Ausserlechner

Michael Bauer

Thoralf Kautzsch

Robert Aigner

Manfred Engelhardt

Carsten Ahrens

Werner Weber

Christian Geissler

Carsten Von Koblinski

Bernhard Goller

Mirko Vogt

Maciej Wojnowski

Dirk Meinhold

Thorsten Scharf

Steffen Bieselt

Maik Stegemann

Franz Michael Darrer

Heiko Froehlich

Chau Fatt Chiang

Thomas Bemmerl

Swee Kah Lee

Thomas Kilger

Walther Pachler

Harald Witschnig

Chee Yang Ng

Christian Stuempfl

Bernhard Rieder

Florian Schoen

Kok Yau Chua

Rainer Steiner

Thomas Herndl

Rudolf Lehner

Thomas Spoettl

Wolfram Langheinrich

Werner Simbuerger

Franco Mariani

Jens Krause

Andre Roeth

Hermann Vilsmeier

Matthias Steiert

Werner Kroeninger

Chee Voon Tan

Kamil Karlovsky

A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Photoacoustic sensors and MEMS devices

An ultrasonic transducer includes at least one ultrasonic transducer element, a semiconductor chip that includes the ultrasonic transducer element, and a housing. The semiconductor chip is arranged in the housing. The semiconductor chip is embedded in a dimensionally stable encapsulation, wherein a contact surface of the dimensionally stable encapsulation is configured for acoustically coupling the ultrasonic transducer to a casing. Additionally, an ultrasonic transducer system and a method for fitting the ultrasonic transducer or ultrasonic transducer system are provided.

Ultrasonic transducer

One example implementation of a mirror system comprises a carrier, and a first chip package arranged on a surface of the carrier and comprising a first MEMS mirror. Furthermore, the mirror system comprises a second chip package arranged on the surface of the carrier and comprising a second MEMS mirror. The mirror system furthermore comprises a reflective element arranged over the surface of the carrier and above the first chip package and the second chip package in such a way that a radiation that is incident in the mirror system and is reflected by the first MEMS mirror in the direction of the reflective element is reflected by the reflective element in the direction of the second MEMS mirror.

Mirror systems

An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

Ultrasonic touch sensor

A sensor device contains a first magnetic field sensor chip having a first sensor element. The first magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the first sensor element. The sensor device contains a second magnetic field sensor chip having a second sensor element. The second magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the second sensor element. The sensor device contains a current conductor configured to carry a measurement current that induces a magnetic field at the locations of the sensor elements. The magnetic field sensor chips and the current conductor are arranged relative to one another in such a way that an influence of a homogeneous magnetic stray field on the first components is compensated for upon difference formation or summation applied to the first components.

Sensor devices, associated production methods and methods for determining a measurement current

What is proposed is an ultrasonic touch sensor having a contact surface for attaching the ultrasonic touch sensor to a casing, having a first ultrasonic transducer element, having a first semiconductor chip, wherein the first semiconductor chip comprises the first ultrasonic transducer element, wherein the first semiconductor chip is potted into a potting compound in such a way that a first cutout is formed from the first ultrasonic transducer element to the contact surface of the ultrasonic touch sensor, and wherein the potting compound forms the housing of the ultrasonic touch sensor.

A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.

Sensor devices with gas-permeable cover and associated production methods

A sensor device contains at least one sensor chip having at least one MEMS structure arranged at a main surface of the at least one sensor chip, wherein the at least one sensor chip is configured to transmit ultrasonic signals and/or to receive ultrasonic signals. The sensor device further contains an acoustic coupling medium arranged selectively on the at least one MEMS structure, wherein the acoustic coupling medium is configured to decouple an ultrasonic signal to be emitted from the at least one MEMS structure and/or to inject a received ultrasonic signal into the at least one MEMS structure. The acoustic coupling medium only partially covers the main surface of the at least one sensor chip.

Sensor devices having an acoustic coupling medium, and associated manufacturing methods

A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.

Radio-frequency devices and methods for producing radio-frequency devices

A sensor device includes a sensor which is configured to detect a physical quantity generated by an impact event and to generate first measurement data based on the impact event. The sensor device also includes a MEMS microphone configured to detect sound waves generated by the impact event and to generate second measurement data based on the impact event. The sensor device is configured to provide the first measurement data and the second measurement data to a logic unit. The logic unit is configured to detect the impact event based on a combination of the first measurement data and the second measurement data.

Sensor devices having sensor and MEMS microphone and associated methods

A method for fabricating packaged semiconductor devices is disclosed. In one example the method comprises providing a plurality of semiconductor dies, the semiconductor dies being arranged in an array on a carrier such that a first side of the semiconductor dies faces the carrier and such that an empty space is arranged laterally besides each semiconductor die. A substrate comprising a plurality of conductive elements is arranged over the plurality of semiconductor dies such that a conductive element is arranged in the respective empty space besides each one of the semiconductor dies. The plurality of semiconductor dies are molded over to form a molded body, and singulating packaged semiconductor devices from the molded body by cutting through the molded body.

Packaged semiconductor device and method for fabricating a packaged semiconductor device

A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Methods including panel bonding acts and electronic devices including cavities

A current sensor system includes a magnetic field sensor including a chip plane, a first set of sensor elements sensitive to a first magnetic field component that is aligned in a first direction that is parallel to the chip plane, and a second set of sensor elements sensitive to a second magnetic field component that is aligned in a second direction that is perpendicular to the chip plane; and three conductor structures arranged in parallel to each other and configured to carry a current parallel or antiparallel to a third direction that is perpendicular to the first direction and to the second direction. The three conductor structures generate three magnetic fields based on the current flowing therethrough, where the three magnetic fields produce a first magnetic field distribution of the first magnetic field component and a second magnetic field distribution of the second magnetic field component.

Magnetic field shaping for magnetic field current sensor

A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Hermetically sealed housing with a semiconductor component and method for manufacturing thereof

An ultrasonic touch sensor includes: a covering having a contact face configured to receive a touch; a first ultrasonic transducer element; a first semiconductor chip comprising the first ultrasonic transducer element; a second ultrasonic transducer element; and an acoustic barrier formed between the first ultrasonic transducer element and the second ultrasonic transducer element.

Growing community of inventors

Wenzenbach, Germany

Horst Theuss