Motorola Corporation

Other

Mostek Corporation

Horst Leuschner

Donald R Dias

Robert J Proebsting

Clinton C Kuo

Daniel C Guterman

A nonvolatile random access memory cell (10) includes a static random access memory circuit and a corresponding nonvolatile memory circuit. The volatile memory circuit operates in a conventional manner and has first and second data states. Upon receipt of a store command signal a charge storage node is driven to either a first or a second charge state, depending upon the data state in the volatile memory circuit. For one charge state the charge storage signal is gated through a transistor (64) and a capacitor (68) to a floating gate node (44). Charge is transferred to and from the floating gate node (44) through current tunneling elements (48,50) which comprise a dielectric fabricated on a monocrystalline substrate. For the recall operation a recall command signal is applied to a transistor (52) which couples a transistor (42) to the DATA node (22) of the volatile memory circuit. If a positive charge state has been stored at the charge storage node (44) the transistor (42) is rendered conductive to pull the DATA node (22) to ground to restore the data state to the volatile memory circuit. If a negative charge state has been stored at the charge storage node (44) there is no load applied to either the DATA node (20) or the DATA node (22). The cross-couple transistors, (12,14) are fabricated to have different lengths such that the node (22) is driven to a high voltage state whenever a default condition is encountered, thereby restoring the original data state to the volatile memory circuit.

MOS Random access memory cell with nonvolatile storage

A sense amplifier quickly charges a column line to a first predetermined voltage level with first, second and third transistors and then charges the column to a second predetermined voltage by using only the second and third transistors. The second and third transistors continue charging to the second predetermined voltage by virtue of having a lower threshold voltage than the first transistor. If a selected memory cell in the column is in a conducting state, the column charges to only the first predetermined voltage for detection as a logic '0'. If the selected memory cell in the column is in a non-conducting state, the column continues charging to the second predetermined voltage for detection as a logic '1'.

Sense amplifier using different threshold MOS devices

A spacer region is provided between the channel stop region and the adjacent portion of the active region of a semiconductor device to reduce the capacitance therebetween. The spacer region may be formed by allowing at least a portion of a conductive line formed on the surface of the device to overlap the active region adjacent the channel stop region.

Semiconductor device having reduced capacitance and method of

A self-tracking high voltage breakdown protection circuit is provided. A non-destructive reference voltage is established by a gated diode having the same breakdown and walkout characteristics as the integrated circuit devices to be protected. A source-follower configuration couples the reference voltage to the integrated circuit. Devices of the protection circuit are internally connected to make each self-protected.

Breakdown voltage protection circuit

A bandgap voltage reference source is provided which is temperature stable or temperature controlled and can be made by standard CMOS process. The reference has two substrate bipolar transistors with the emitter current density of one of the transistors being larger than the emitter current density of the other transistor. The transistors are used as emitter followers having resistors in their emitter circuits from which an error voltage is obtained. The error voltage is amplified through a differential or operational amplifier. Through the amplifier or through a resistor network, an output voltage higher or lower, respectively, than the bandgap voltage can be obtained. The output voltage can be made to have a positive, negative, or zero temperature coefficient.

Growing community of inventors

Austin, TX, United States of America

Horst Leuschner