Dialog Semiconductor Gmbh

Dialog Semiconductor (uk) Limited

Digital Imaging Systems Gmbh

Youliza, Gehts B.v. Limited Liability Company

Rpx Corporation

Dialog Imaging Systems Gmbh

Tridonic Gmbh Co. Kg

Silego Technology Inc.

Tridonicatco Gmbh & Co Kg

Dialog Semicon

Horst Knoedgen

Nebojsa Jelaca

Dirk Huettmann

Christoph Nagl

Frank Kronmueller

Julian Tyrrell

Ambreesh Bhattad

Stefan Zudrell-Koch

Johan Nilsson

Taner Dosluoglu

James T Doyle

Gary Hague

Slawomir Rafal Malinowski

Detlef Schweng

Baorong Chen

Milan Dragojevic

Kaiwen He

Dirk Jacobsen

Andrey B Malinin

Eric Marschalkowski

Xiaoyan Wang

John Othniel McDonald

Hidenori Kobayashi

Eduardo Pereira

Danny Chan

Chuanyang Wang

Günter Marent

Martin Faerber

Nathan Willis John

Klaus Strohmayer

Kun Yang

Jürgen Biela

Lars Lennartsson

Manfred Plankensteiner

Jung Woo Choi

Francesco Marraccini

Horst Schleifer

Lars Lennartson

Thomas Altebaeumer

Thomas Nedwal

Manfred Weinacht

Johann W Kolar

Jürgen Fink

Markus Braun

Florian Giezendanner

The present document describes a power converter configured to provide energy at an output based on energy provided at an input. The power converter comprises a first switch, wherein a first node is coupled to the input and wherein a second node is coupled to an intermediate point, a second switch, wherein a first node is coupled to the intermediate point and wherein a second node is coupled to an inductor point, a capacitor, wherein a first node of the capacitor is coupled to the intermediate point, a first diode element, wherein a first node is coupled to a second node of the capacitor and wherein a second node is coupled to the inductor point, a second diode element, wherein a first node is coupled to a reference port, and wherein a second node is coupled to the second node of the capacitor; and an inductor, wherein a first node is coupled to the inductor point and wherein a second node is coupled to the output.

Power converter with a high conversion ratio

An electronic circuit provided with a III/V semiconductor domain, and a method of operating such a circuit is presented. In particular, the present application relates to electronic circuit based on a Gallium Nitride (GaN) semiconductor. GaN components must be controlled in a way that ensures proper operation over a wide variation of GaN parameters. There is a circuit comprising a first domain coupled to a second domain, the first domain being based on a III/V semiconductor; wherein the first domain comprises a first component and a second component. The second component being representative of an electrical characteristic of the first component. The second domain contains a sensor adapted to sense an electrical quantity of the second component and an input generator coupled to the sensor. The input generator is adapted to provide at least one input, based on the electrical quantity, to the first domain.

Circuit based on a III/V semiconductor and a method of operating the same

A high-voltage power converter with a high-side switch coupled with a high-voltage input and a high-side switch control coupled with the high-side switch are presented. The high-side switch control drives the high-side switch on and off. There is a low-side switch coupled via an output node to the high-side switch. The low-side switch is on when the high-side switch is off and vice versa. A supply capacitor is coupled with a low-voltage supply terminal. The high-side switch control to provides a supply voltage for the high-side switch control. A communication module is coupled with the high-side switch control to provide a bidirectional communication between the high-side switch control and a control system that operates in a low-voltage domain, wherein the communication to and from the high-side switch control is enabled when the low-side switch is on and the high-side switch is off.

Bidirectional signaling method for high-voltage floating circuits

The present document describes a control circuit and a method for controlling a power transistor, wherein the power transistor has a drain, a gate and a source. The power transistor has a body diode. The control circuit is configured to predict a time instant at which a drain potential at the drain falls below a source potential at the source of the power transistor by more than a diode threshold voltage of the body diode. Furthermore, the control circuit is configured to apply a pre-bias potential and/or provide a pre-bias current to the gate of the power transistor in dependence the predicted time instant, such that a conducting channel between the drain and the source is provided, which at least partially takes over current which would otherwise flow through the body diode.

Control circuit and method for avoiding reverse recovery of a power transistor

A switching circuit and a method for providing a switch array having an on resistance is presented. The switch array has a plurality of switches, where each switch is arranged to be in different configuration states. The states include an enabled configuration and a disabled configuration. The switching states include an on state and an off state. Each switch is held in the off state when in the disabled configuration. Control circuitry sets the switches to either the enabled configuration or the disabled configuration, and a memory element coupled to the control circuitry and arranged to store configuration data for setting the configuration state of each of the switches. The control circuitry sets the configuration state of the switches based on a signal received from the memory element. The on resistance of the switch array depends on the switching state of the switches and their individual on resistances.

Switching circuit

The present document describes a level-shifter circuit and method to transmit data from a high-voltage domain to a low-voltage domain. The level-shifter circuit has a first current path with a first current control unit to set a first current based on a high-voltage data signal in the high-voltage domain; and a second current path with a second current control unit to set a second current based on the high-voltage data signal. Furthermore, the circuit has an isolation unit to transfer the first current and the second current from the high-voltage domain to the low-voltage domain; and a current comparator unit to compare the first current with the second current to provide a low-voltage data signal in the low-voltage domain, which corresponds to the high-voltage data signal.

Circuit and method for ultra-high-voltage to low-voltage level shifting

A solid state lighting SSL assembly comprises an SSL device, a capacitor, a directional conducting device and a supply switch. The capacitor is coupled in parallel with the SSL device. The directional conducting device is coupled between an output terminal of the capacitor and a supply terminal which provides a supply voltage for the SSL assembly. The directional conducting device is configured to conduct in a direction from the output terminal to the supply terminal and to isolate in the opposite direction. The supply switch is coupled between the output terminal and ground. In addition, a method for operating a solid state lighting SSL assembly is proposed.

Solid state lighting assembly

A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.

Multi-level gate control for transistor devices

An actuation system is proposed for an optical system, comprising a voice coil motor for actuating the optical system, the voice coil motor comprising a magnet and an electric coil, a position measuring unit for measuring the position of the electric coil and providing a position feedback signal, and a control unit for closed loop control of the position of the optical system based on a target position and the position feedback signal, used for generating a drive signal for the electric coil. According to the disclosure, a ferromagnetic element is arranged in proximity to the electric coil so that the inductance of the electric coil depends on its position. Further, the position-measuring unit measures the inductance of the electric coil and determines the position of the electric coil based on the determined inductance.

Actuator with inherent position sensor

An overvoltage protection circuit for a transistor device is presented. The overvoltage protection circuit comprises a first pin coupled to a gate terminal of the transistor device, an electrostatic discharge protection circuit coupled between a second pin and a source terminal of the transistor device, a first diode coupled between the first pin and the second pin, and a second diode coupled in parallel to the first diode between the first pin and the second pin. The forward direction of the first diode is opposite to the forward direction of the second diode. In addition, A method of measuring a gate leakage current of a transistor device and a method of bonding a transistor device coupled to such an overvoltage protection circuit are presented.

Overvoltage protection of transistor devices

A half bridge circuit and a method for its operation are presented. The half bridge circuit contains a high-side switch, a latch for providing a drive signal for the high-side switch, a first transistor device acting as a level shifter for shifting a voltage level at an input of the latch. The first transistor device is coupled between a supply voltage level and ground, and the voltage level at the input of the latch is shifted in accordance with a current that flows through the first transistor device. A second transistor device is coupled between the supply voltage level and ground, in parallel to the first transistor device. There is a current mirror for mirroring a current that flows through the second transistor device. There is a circuit path for feeding the mirrored current to an intermediate node between the supply voltage level and the first transistor device.

Compensation of level-shift capacitance

A controller for a power converter to convert electrical power at an input voltage into electrical power at an output voltage and a method of operating such controller is presented. The controller for controlling a power converter has an input port to receive a voltage representative of the input voltage; an input voltage measuring unit to sample a measuring voltage and to determine a measurement value that is representative of the input voltage; a switch; and a diode connectable with a storage unit to provide a supply voltage for the controller during operation of the controller. The switch controls the charging of the storage unit from the voltage at the input port.

Power converter controller

A circuit for driving a power switch is presented. The circuit includes a first power switch coupled to a second power switch via a switching node and a driver coupled to the first power switch, where the driver contains an energy storing element coupled to the switching node. The circuit also contains a sensor to sense an electrical parameter of the driver and a charger coupled to the sensor. The charger provides a charge current to charge the energy storage element, and to control the charge current based on the electrical parameter. In particular, a circuit for driving a power switch based on a III/V semiconductor is presented. In addition, a method of powering a power switch driver is presented. The method includes sensing an electrical parameter of the driver and adjusting a current to charge the energy storing element based on the electrical parameter.

Circuit for driving a power switch

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Munich, Germany

Horst Knoedgen