Daimler Chrysler Ag

Daimler-Benz Ag

Licentia Patent-Verwaltungs Gmbh

Temic Telefunken Microelectronic Gmbh

Icentia Patent-Verwaltungs-Gmbh

Horst Kibbel

Helmut Jorke

Andreas Gruhle

Harry Dietrich

Ulf Konig

Hartmut Presting

Heinz-Achim Hefner

Andreas Schuppen

Hans-Joest Herzog

Johannes Konle

Ulf Koenig

Jessica Kuchenbecker

The invention concerns a device for and a process for testing electric motors, in particular fan motors, for functionality, wherein electromagnetic alternating fields produced by an electric motor are received by an antenna, wherein the received signals are analyzed for signal components in the frequency range of the rotation value of electric motors or their harmonics via an analysis unit, and wherein upon determination of functionality the results are indicated by an indicator unit.

Process and device for testing electric motors, in particular fan motors, for functionality

A silicon-germanium thin-film solar cell having a quantum well structure as an active base layer within the space-charge region of the silicon p-n diode junction. The quantum well structure is composed of a sequence of silicon and germanium layers. In this manner, a highly absorbent base layer is produced in a silicon solar cell.

Silicon-germanium solar cell having a high power efficiency

A method for producing relaxed epitaxy layers on a semiconductor substrate by an epitaxy process, particularly molecular beam epitaxy, with a hydrogen source, wherein the following steps occur during an in situ process sequence: a hydrogen-containing intermediate layer is deposited on the substrate surface or diffused into the substrate near the surface; a strained epitaxy layer is grown on this intermediate layer; and the epitaxial layer subsequently is relaxed by a temperature treatment. A preferred layer sequence formed according to the above method includes a substrate of silicon with a hydrogen-containing intermediate layer that is deposited thereon or diffused into the substrate surface; a relaxed Si,Ge,epitaxial layer with a germanium concentration of x&equals;0.1 to 0.3 as a first buffer layer; a hydrogen-containing intermediate layer deposited on or diffused into an outer surface of the first buffer layer; a Si,Ge,relaxed epitaxy layer with a germanium concentration of x&equals;0.3 to 0.5 as second buffer layer; and, a Si,Ge,component structure. Additional relaxed Si,Ge,epitaxy layers with increasing germanium concentrations up to a maximum x&equals;1 may be disposed between the second buffer layer and the component structure layer.

Method for producing epitaxial silicon germanium layers

A process for preparing a bipolar transistor for very high frequencies is described, which is especially advantageous for the preparation of heterobipolar transistors and leads to components with low parasitic capacities and low base lead resistance. The process includes forming a structured first layer with collector zone and insulation areas surrounding the collector zone on a monocrystalline lead layer. A series of monocrystalline transistor layers are grown on the first layer over the collector zone by differential epitaxy and a series of polycrystalline layers is grown at the same time over the insulation areas. A series of polycrystalline layers is designed as a base lead.

Process for preparing a heterojunction bipolar transistor

In a method for producing a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arrangement of strained semicondutor layers of at least two different semiconductor compositions forming at least one heterojunction, at least one of the semiconductor layers is provided with a doped layer which extends essentially parallel to the heterojunction and whose layer thickness is no greater than the thickness of the semiconductor layer in which it is produced.

Method for producing a spatially periodic semiconductor layer structure

A method for producing a doped semiconductor layer on a semiconductor substrate, employing particle radiation, including the steps of initially applying an adsorbed layer containing a doping substance to the semiconductor substrate; controlling the concentration of the doping substance in the adsorbed layer; growing a semiconductor layer having a crystal lattice structure on the substrate; performing a secondary implantation operation for incorporating the doping substance in the crystal lattice of the semiconductor layer; and performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions.

Growing community of inventors

Erbach, Germany

Horst Kibbel