Intel Corporation

Horaira Abu

Harry Muljono

Jason Sandri

Charles A Peterson

Linda K Sun

Monib Ahmed

Ian S Walker

Matthew B Pedersen

Brian Harris

Jason G Sandri

Some embodiments include apparatuses having an electrostatic discharge (ESD) protection circuit coupled to a node, and first, second, and third circuits coupled to the node. The first circuit includes a first charge pump to cause a voltage at the node during activation of the first circuit to change from a first voltage value to a second voltage value within first multiple periods of a clock signal, the second voltage value being less than the first voltage value. The second includes a second charge pump to cause a voltage at the node during activation of the second circuit to change from a third voltage value to a fourth voltage value during second multiple periods of the clock signal, the fourth voltage value being greater than the third voltage value. The third circuit generates information based on the values of the voltage at the node during activation of the first and second circuits. The apparatuses optionally include a fourth circuit to generate an additional voltage at an additional node. The additional voltage has a negative voltage value. The additional node is coupled to a gate of at least one transistor of the first circuit.

On-die circuitry for electrostatic discharge protection (ESD) analysis

In accordance with some embodiments, the way in which the fuses are sensed and, particularly, their order may be made more random so that it is much more difficult to simply exercise the device and determine all the values of the storage elements within the fuse array. One result is a more secure storage device.

Random fuse sensing

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Fremont, CA, United States of America

Horaira Abu