Taiwan Semiconductor Manufacturing Comp. Ltd.

Hoppy Lee

Chih-Yung Lin

Po-Nien Chen

Hsiao-Han Liu

Chung-Yu Chiang

Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

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Hsinchu, Taiwan

Hoppy Lee