Micron Technology Incorporated

Hope Abigail Henry

Patrick Robert Khayat

Zhengang Chen

Dung Viet Nguyen

Chiara Cerafogli

Shantilal Doru

Nkiruka Christian

Maithilee Motlag

Described are systems and methods for memory read calibration based on memory device-originated metrics characterizing voltage distributions. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first metric characterizing threshold voltage distributions of a subset of the plurality of memory cells; determining a first read voltage adjustment; receiving a second metric characterizing the threshold voltage distributions; determining a second read voltage adjustment; and applying the second read voltage adjustment for reading the subset of the plurality of memory cells.

Memory read calibration based on memory device-originated metrics characterizing voltage distributions

Methods, apparatuses, and non-transitory machine-readable media associated with determining a location of an object are described. An object location determination can include receiving a user request associated with an object, receiving first signaling from a first image source, and receiving second signaling from a second image source. The object location determination can include writing data that is based at least in part on a combination of the user request, the first signaling, and the second signaling and determining a confidence level of identification of the object associated with the user request based on the user request, the first signaling, and the second signaling. The object location determination can include identifying output data representative of a location of the object based on the confidence level and transmitting the output data representative of the location of the object via third signaling.

Object location determination

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Boise, ID, United States of America

Hope Abigail Henry