Samsung Electronics Co., Ltd.

Hoonseop Kim

Youngdo Kim

Sangki Nam

Chansoo Kang

Changsoon Lim

Minju Kim

Vasily Pashkovskiy

Sejin Oh

Daewon Kang

Youngduk Suh

Jonghun Pi

Donghyub Lee

Vladmir Protopopov

Vladimir Vsevolodovich Protopopov

A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.

Device for measuring density of plasma, plasma processing system, and semiconductor device manufacturing method using the same

A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

Method of cleaning collector of EUV light source system

A semiconductor substrate processing apparatus includes a transfer chamber disposed between process chambers performing processing of a semiconductor substrate, a transfer robot disposed inside the transfer chamber to load the semiconductor substrate into the process chamber and unload the semiconductor substrate whose processing has been performed in the process chamber, an optical assembly irradiates irradiation light having multiple wavelengths onto the semiconductor substrate, the optical assembly splitting measurement light reflected from a surface of the semiconductor substrate into first and second measurement light and collecting interference light caused by first reflected light and second reflected light, a light detector detecting the interference light and converting the interference light into an electric signal to produce an interference signal, and a controller extracting spectrum information for each wavelength of the measurement light from the interference signal and calculating distribution information of a film formed on the semiconductor substrate.

Semiconductor substrate measuring apparatus, semiconductor substrate processing apparatus and semiconductor device manufacturing method using the same

Growing community of inventors

Suwon-si, South Korea

Hoonseop Kim