The State University of New York

Hoong J Lee

Quanxi Jia

Wayne K Anderson

Franklyn M Collins

Kaili Jiao

In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.

Growing community of inventors

Amherst, NY, United States of America

Hoong J Lee