Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (Corporation)

Hoon Lian Yap

Chuin Boon Yeap

Ranbir Singh

Nace Rossi

Peter Chew

Jun Xie

Jovin Lim

Chih Ping Yong

Weoi San Lok

A integrated circuit system including providing an integrated circuit device, forming an undoped insulating layer over the integrated circuit device, forming a thin insulating layer over the undoped insulating layer, forming a doped insulating layer over the thin insulating layer, and forming a contact in the undoped insulating layer, thin insulating layer and the doped insulating layer.

Integrated circuit system with contact distribution film

A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used for generating the high density plasma. The first step deposition uses high argon concentration and low sputter etch-to-deposition (E/D) ratio. High E/D ratio maintains the gap openings without necking. In the second step, a lower argon concentration and lower E/D ratio are used. Since observed metal defects are caused by argon diffusion in the top 200-300 nm of the HDP-CVD film, by controlling argon concentration in the top part of the film (i.e. second step deposition) to a low value, a reduced number of metal defects are achieved.

Method for reducing argon diffusion from high density plasma films

Growing community of inventors

Singapore, Singapore

Hoon Lian Yap