Sk Hynix Nand Product Solutions Corp.

Hoon Koh

Chang Wan Ha

Deepak Thimmegowda

Liu Liu

Ahsanur Rahman

David Meyaard

Richard M Gularte

An embodiment of a memory device may include a full block memory array of a lower tile of 3D NAND string memory cells, a full block memory array of an upper tile of 3D NAND string memory cells, a first portion of a string driver circuit coupled to the full block memory array of the lower tile, a second portion of the string driver circuit coupled to the full block memory array of the upper tile, a first split block memory array of the lower tile coupled to the first portion of the string driver circuit, and a second split block memory array of the upper tile coupled to the second portion of the string driver circuit. Other embodiments are disclosed and claimed.

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San Jose, CA, United States of America

Hoon Koh