Lg Semicon Co., Ltd.

Other

Korea Institute of Industrial Technology

Naieel Technology

Sang Sup Jew

Kwang Ho Ko

Bak Kwang Kim

Hoon Huh

Sung Jin Kim

Jee Woo Lee

Young Ger Suh

Jeong Hill Park

Eung Seok Lee

Deuk Joon Kim

Won Ki Kim

Chang Kiu Moon

Suk Ku Kang

Bong Jin Lee

Eun Kyung Kim

Ki Hwa Jung

Moon Woo Chun

Hwa Jung Kim

Jae Hoon Cheong

Hyung Ook Kim

Jaewoo Kim

Young-Soo Seo

Duckbong Seo

Ji Young Hwang

Woo Sik Kim

Jee Young Jang

Hui Jin Kim

Eun Sung Yoo

Tae Il Kim

Junghwan Jung

Suk Hoon Choi

Byunghoon Kim

Inpil Kang

Proposed is a method for producing a polymeric piezoelectric composite having boron nitride nanotubes (BNNT) dispersed therein, the method including: a solution-providing step for providing a polymeric solution; a dispersing step for dispersing BNNT in the polymeric solution; and an electro spinning step for electro spinning the polymeric solution with BNNT dispersed therein, thereby producing micro- and/or nano fibers based polymeric piezoelectric composites.

Method and apparatus for producing polymeric piezoelectric composite including boron nitride nanotubes dispersed therein, and polymeric piezoelectric composites produced using the method

Provided are a method of preparing a large-area, three-dimensional graphene transparent electrode using an electrospray deposition method and a large-area, three-dimensional graphene transparent electrode prepared therefrom. More particularly, the present invention is related to a method of preparing a large-area, three-dimensional graphene transparent electrode using an electrospray deposition method, which may easily prepare a large-area graphene transparent electrode having high transparency and conductivity through an electrospray process and may obtain effects, which may not be realized in a two-dimensional transparent electrode prepared by a typical method such as CVD, due to a three-dimensional stack structure in which graphene is arranged perpendicular to a substrate, and a large-area, three-dimensional graphene transparent electrode prepared therefrom.

Method of preparing large-area, three-dimensional graphene transparent electrode using electrospray process and large-area, three-dimensional graphene transparent electrode prepared therefrom

2-hydroxypropionic acid derivative and its manufacturing method

Oxirane carboxylic acid derivative and its manufacturing method

A mask for a semiconductor device includes a frame having an opening therein, a membrane film formed on the frame, and a patterned light shield formed on the membrane via an interlayer. To form the mask, an interlayer is formed on a first silicon layer, and a second silicon layer is formed on the interlayer. The second silicon layer is selectively etched to thereby form a plurality of openings therethrough, and a light shield is formed in a corresponding one of the openings. The remaining second silicon layer is removed, and a predetermined region of the first silicon layer is etched to expose the interlayer therethrough. A membrane film is formed on an entire lower surface of the resultant structure, and a predetermined region of the interlayer is etched to expose a predetermined region of the membrane film.

Mask for making a semiconductor device and fabrication method thereof

A diffusion confirming pattern for measuring a diffusion distance of an etch-resistant component during a transfer process of a semiconductor device, includes a first photoresist pattern formed on a substrate according to a first mask pattern, and a second photoresist pattern formed on the substrate according to a second mask pattern, wherein the first mask pattern is separated from the second mask pattern by a predetermined interval, the second photoresist pattern is separated from the first photoresist pattern by an interval, and the predetermined interval is compared with the interval between the first and second photoresist patterns to determine the diffusion distance of the etch-resistant component.

Lateral diffusion confirming pattern and a method of measuring a lateral

A mask and method of manufacturing is disclosed. The mask may include a transparent quartz substrate having light-transmitting regions and light-shielding regions, a light-control layer formed on the substrate excluding a portion corresponding to a light-transmitting region of an edge portion, and a light-shielding layer formed on the light-control layer of an light-shielding region. The method may include the steps of preparing a quartz substrate, forming a light-control layer on the quartz substrate, forming a light-shielding layer on the light-shielding region of the light-control layer, and selectively etching the light-control layer corresponding to light-transmitting regions of an edge portion of the substrate.

Semiconductor mask and method of manufacturing the same

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Seoul, South Korea

Hoon Huh