Rockley Photonics Limited

University of Southern California

Chamartin Laboratories LLC

Other

Apple Inc.

Celestial Ai Inc.

Hooman Abediasl

Aaron John Zilkie

Amit Singh Nagra

Guomin Yu

Damiana Lerose

Pradeep Srinivasan

Andrew George Rickman

Haydn Frederick Jones

Andrea Trita

Yi Zhang

Cristiano Dalvi

Sean Merritt

Philip Perea

Dong Yoon Oh

Alexander Gondarenko

Richard Grote

Roozbeh Parsa

Mark Alan Arbore

Alfredo Bismuto

Thomas Pierre Schrans

Jason S Pelc

Chia-Te Chou

Hossein Hashemi

Karlheinz Muth

Jeffrey B Driscoll

Gerald Cois Byrd

Joyce Kai See Poon

Zheng Yong

SungWon Chung

Adam Scofield

Jeffrey Driscoll

Kate LeeAnn Bechtel

Kyle R Rick

Renata Melamud Berger

David Arlo Nelson

Evan Einbender Aamodt

Adam C Scofield

Kevin Kinichi Masuda

Brett Sawyer

Breanna Stachowski

SeungJae Lee

Benjamin Ver Steeg

Jerry L Byrd

Lok Man Chu

William Vis

Jerry Byrd

Aaron L Birkbeck

Alexander Fast

Vafa Jamali

James Dongyoon Oh

Suresh Chengalva

Patrick John Castagna

Craig Gadd

Todd Andrew Newhouse

Christopher Alan Harris

Vishwas Kulkarni

Adrian Williamson Bahani

Jennifer Lynn Corso

Ferdyan Lesmana

Goumin Yu

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Optical sensing module

A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.

Wearable device

Embodiments are directed to a photonic device that includes a first substrate defining a surface and a trench forming a depression along a portion of the surface, and a second substrate coupled with the surface and extending from the surface to form a raised portion around the trench. The photonic device can also include a laser die positioned within the trench, such that the laser die is surrounded by the second substrate, and an optical material positioned within a region between the laser die and the second substrate. The photonic device can further include a third substrate coupled with the second substrate such that the second substrate is positioned between the first substrate and the third substrate such that the second substrate is configured to at least partially isolate the laser die from mechanical stress exerted on the optical device.

Photonic integrated circuits with controlled collapse chip connections

This disclosure relates to the layout of optical components included in a photonics integrated circuit (PIC) and the routing of optical traces between the optical components. The optical components can include light sources, a detector array, and a combiner. The optical components can be located in different regions of a substrate of the PIC, where the regions may include one or more types of active optical components, but also may exclude other types of active optical components. The optical traces can include a first plurality of optical traces for routing signals between light sources and a detector array, where the first plurality of optical traces can be located in an outer region of the substrate. The optical traces can also include a second plurality of optical traces for routing signals between the light sources and a combiner, where the second plurality of optical traces can be located in regions between banks of the light sources.

Photonics integrated circuit architecture

An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 &#x3bc;m away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

Optoelectronic device

A silicon based photodetector and method of manufacturing the same are provided. The photodetector comprising: a silicon substrate; a buried oxide layer, above the silicon substrate; and a waveguide, above the buried oxide layer. The waveguide includes a silicon, Si, containing region and a germanium tin, GeSn, containing region, both located between a first doped region and a second doped region of the waveguide, thereby forming a PIN diode. The first doped region and the second doped region are respectively connected to first and second electrodes, such that the waveguide is operable as a photodetector.

Waveguide type photodetector and method of manufacture thereof

An optoelectronic device. The optoelectronic device comprising: a rib waveguide provided on a substrate of the device, the rib waveguide comprising a ridge portion and a slab portion; a heater, disposed within the slab portion; a thermally isolating trench, adjacent to the rib waveguide, and extending into the substrate of the device; and a thermally isolating cavity within the substrate, which is directly connected to the thermally isolating trench, and which extends across at least a part of a width of the rib waveguide between the rib waveguide and the substrate.

An optoelectronic device. The device comprising: a silicon-on-insulator, SOI, wafer, the SOI wafer including a cavity and an input waveguide, the input waveguide being optically coupled into the cavity; and a mirror, located within the cavity and bonded to a bed thereof, the mirror including a reflector configured to reflect light received from the input waveguide in the SOI wafer.

Optoelectronic device and method of manufacture thereof

An optoelectronic device, and a method of fabricating an optoelectronic device. The device comprising: a rib waveguide formed of doped silicon, said doped waveguide having a ridge portion, containing an uppermost surface and two sidewall surfaces; and a slab portion, adjacent to the two sidewall surfaces. The device further comprises: a metal contact layer, which directly abuts the uppermost surface and two sidewall surfaces, and which extends along a part of the slab portion so as to provide a Schottky barrier between the metal contact layer and the rib waveguide.

Schottky photodetector

A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.

Waveguide modulator structures

A light ranging and detection system achieving reconfigurable very wide field of view, high sampling of spatial points per second with high optical power handling by using architecture to efficiently combine different wavelengths, time and frequency coding, and spatial selectivity. The transmitter is capable of generating multiple narrow beams, encoding different beams and transmitting in different spatial directions. The receiver can differentiate and extract range and reflectivity information of reflected beams. Three dimensional imaging of the environment is achieved by scanning the field of view of the transmitter. Control and signal processing electronic circuitries fabricated in a chip are packaged together with a chip containing the photonic components of the ranging system.

Optical scanner and detector

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

Waveguide optoelectronic device

Growing community of inventors

Pasadena, CA, United States of America

Hooman Abediasl