Sungkyunkwan University

Samsung Electronics Co., Ltd.

Hoojeong Lee

Seongjun Park

Seongjun Jeong

Byunghoon Lee

Hyoungsub Kim

Hyena Kwak

Jaehyun Yang

Jun Gu Kang

Sekwon Na

Sunho Kim

An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.

Optoelectronic device

An method for preparing a flexible transparent electrode film that has a high transmittance and low sheet resistance without having to go through a separate heating process by using cesium, and a flexible transparent electrode film prepared thereby, the method including: applying a nanowire transparent conductive film on a high molecular base material film; coating the nanowire transparent conductive film with a sol-gel solution wherein titanium dioxide and cesium are mixed; and welding the nanowire.

Method for producing a flexible transparent electrode using cesium and a flexible transparent electrode produced thereby

Provided herein is a bump including a diffusion barrier bi-layer, the bump having: a conductive layer; a first diffusion barrier layer formed on or above the conductive layer, and comprising an alloy of nickel and phosphorus; a second diffusion barrier formed on or above the first diffusion barrier layer, and comprising copper; and a solder layer formed on or above the second diffusion barrier layer. A manufacturing method for producing a bump is also provided.

Bump including diffusion barrier bi-layer and manufacturing method thereof

Growing community of inventors

Suwon-si, South Korea

Hoojeong Lee