Fujimi Incorporated

Hooi-Sung Kim

Anne Miller

Shogo Onishi

Charles Poutasse

Fusayo Saeki

The present disclosure relates to a polishing composition enabling an improved molybdenum removal rate while reducing etching of molybdenum (high Mo RR/Mo SER ratio) and simultaneously enabling a high ratio of molybdenum removal rate to silicon oxide removal rate (Mo:TEOS removal rate selectivity), wherein, the polishing composition comprises an abrasive, a molybdenum (Mo) removal rate enhancer, an organic acid, an oxidizer, a corrosion inhibitor, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo RR/Mo SER ratio and high Mo:TEOS removal rate selectivity, thus providing a composition well suited for polishing a molybdenum surface.

Polishing composition and polishing method using the same

The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.

Chemical mechanical polishing compositions and methods of use thereof

Provided herein are compositions and methods for polishing surfaces comprising cobalt and optionally a low-K material, e.g., in semiconductor device fabrication. Embodiments include a slurry for chemical mechanical polishing a surface comprising cobalt and low-K materials, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a Co corrosion inhibitor and an ILD suppressor.

Compositions for polishing cobalt and low-K material surfaces

Provided herein are methods and compositions for chemical mechanical polishing (CMP) of metals. The present methods and compositions involve the use of a corrosion inhibitor having the general formula CH&#x2014;(OCHCH)-L-R in the CMP slurry composition, where m is an integer between 6 and 11, inclusive of end points, and n is an integer greater than or equal to 6, L is a bond, &#x2014;O&#x2014;, &#x2014;S&#x2014;, &#x2014;R&#x2014;, &#x2014;S&#x2014;R&#x2014;, or &#x2014;O&#x2014;R&#x2014;, where Ris a Calkylene; and R is an anionic group. The present methods and compositions can be used to achieve a high metal removal rate, while effectively inhibiting metal corrosion during CMP, and are particularly useful for CMP of cobalt (Co).

Anti-corrosion polishing composition

Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

Buffered slurry formulation for cobalt CMP

A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Growing community of inventors

Tualatin, OR, United States of America

Hooi-Sung Kim