Jiangsu Leuven Instruments Co. Ltd

Hongyue Sun

Dongdong Hu

Kaidong Xu

Lu Chen

Dongchen Che

Ziming Liu

Juebin Wang

Zhongyuan Jiang

Hushan Cui

Dajian Han

Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.

Method for etching magnetic tunnel junction

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Jiangsu, China

Hongyue Sun