Southern University of Science and Technology

Other

Hangzhou Haicun Information Technology Co., Ltd.

Xiamen Haicun IP Technology LLC

Zte Corporation

Hongyu Yu

Guobiao Zhang

Yuejin Guo

Shengming Zhou

Zhitang Song

Jinfeng Kang

Wang Zhang

Sannian Song

Guoxing Zhang

Guangzhao Liu

Mingtao Hu

Bin Yu

Yida Li

Kai Chen

Jin He

Chen Shen

Jun Lan

Xiaodong Xiang

Chenchang Zhan

RangYu Deng

XiangDong Lu

XuGuang Wang

DongYun Zhang

ZhiWei Liu

Yuefeng Li

Wenyu Feng

Mei Shen

Bangrui Wan

Yangmei Zuo

The present invention discloses an ESD protection circuit comprising resistor vias. It comprises a plurality of ESD devices connected in parallel, with each ESD device comprising a resistor and a two-terminal switch (e.g. an OTS component) connected in series. The resistor is formed in a resistor via disposed vertically with the two-terminal switch and filled with at least a conductive material with high resistivity.

Electrostatic discharge (ESD) protection circuits

The present invention discloses parallel, series and hybrid ESD protection circuits. A preferred parallel ESD protection circuit comprises a plurality of ESD devices connected in parallel, with each comprising a resistor and an OTS component connected in series. A preferred series ESD protection circuit comprises a plurality of ESD devices connected in series, wherein the OTS components in all ESD devices are disposed on a same level. A preferred hybrid ESD protections circuit comprises ESD devices connected in parallel, as well as in series.

A method for making a three-dimensional (3-D) module includes the steps of: A) forming a laminate of alternate ceramic tape layers and internal electrode layers on a substrate; B) etching said laminate to form first and second capacitor stacks at said first and second locations; C) firing said first and second capacitor stacks integrally; D) forming first and second pairs of external electrodes on said first and second capacitor stacks, respectively.

Methods for making three-dimensional module

The invention disclosure a remotely operated pneumatic manipulator based on Kinect, comprising Kinect sensor, computer, D/A embedded board, PWM piezoelectric pneumatic ratio valve, pneumatic triad, air compressor, artificial muscle, spring and finger joint, wherein the Kinect sensor is provided on one side of the finger joint, a camera module of the Kinect sensor is faced to the finger joint. The pneumatic humanoid manipulator of the invention has basically the same dimensions as human hands, can achieve human-computer interaction and remotely operation, the transmission structure thereof is novel, simple and compact, the fingers thereon are convenient to control and flexible to move, the finger movement range is large for wide application, moreover, the PWM piezoelectric pneumatic ratio valve is with advantages of fast dynamic response, low cost, strong resistance to noise, and high detection accuracy of Kinect sensor.

Remotely operated pneumatic manipulator based on kinect

A three-dimensional (3-D) module with integrated passive components includes a plurality of vertically stacked sub-modules. Each sub-module comprises a device level comprising a high-k dielectric (e.g. ceramic) material and an interconnect level comprising a low-k dielectric (e.g. organic) material. The passive components in the device level are fired integrally, whereas the device level and the interconnect level are fired independently.

Three-dimensional module with integrated passive components

The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)

The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die address/data-translator (A/D-translator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least an A/D-translator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The A/D-translator converts at least an address and/or data between logic and physical spaces.

Three-dimensional one-time-programmable memory comprising off-die address/data-translator

The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.

Small-grain three-dimensional memory

Growing community of inventors

Shenzhen, China

Hongyu Yu