Semiconductor Energy Laboratory Co., Ltd.

Fujitsu Display Technologies Corporation

Sharp Kabushiki Kaisha Corporation

Other

Sharp Corporation

Fujitsu Corporation

Hongyong Zhang

Yasuhiko Takemura

Shunpei Yamazaki

Toru Takayama

Satoshi Teramoto

Hideki Uochi

Naoaki Yamaguchi

Masayuki Sakakura

Hideto Ohnuma

Akiharu Miyanaga

Hisashi Ohtani

Naoto Kusumoto

Takeshi Fukunaga

Toshimitsu Konuma

Hideomi Suzawa

Yoshiharu Hirakata

Atsunori Suzuki

Hideaki Kuwabara

Masaaki Hiroki

Akira Sugawara

Michiko Takei

Yukiko Uehara

Tatsuya Ohori

Hiroki Adachi

Akira Mase

Hiroaki Ishihara

Akira Takenouchi

Kenji Otsuka

Jun Koyama

Yuugo Goto

Takashi Inushima

Junichi Takeyama

Takeshi Fukada

Atsushi Yoshinouchi

Mutsuo Yamamoto

Itaru Koyama

Yurika Satou

Hideki Nemoto

Koichiro Tanaka

Hiromi Enomoto

Susumu Okazaki

Tsukasa Shibuya

Hirokazu Miwa

Toshiji Hamatani

Fumiaki Funada

Yasushi Kubota

Yutaka Takafuji

Tatsuo Morita

Takatoshi Mayama

Yuji Kawasaki

Minoru Miyazaki

Yosuke Tsukamoto

Akane Murakami

Hirohisa Tanaka

Tsutomu Kai

Makoto Igarashi

Takamasa Kousai

Satomi Nagasawa

Akira Miyanaga

Noriko Uchida

Tetsuya Kobayashi

Yuichi Inoue

Kazutaka Hanaoka

Seiji Tanuma

Hiroshi Murakami

Tadayoshi Miyamoto

Noriyuki Ohashi

Kazuhiro Takahara

Keizo Morita

Nobuo Kubo

Kenichi Yanai

Seii Sato

Masanori Nakamura

Michiya Oura

Futoshi Ishii

Hisahi Ohtani

Hiroshi Kuroki

Yutaka Takizawa

Tetsuro Hori

Shirou Isoda

Yasuhiko Takamura

A display device of the present invention includes a wiring and an electrode over a substrate, a resin film formed over the electrode, and a sealing material formed over the resin film, wherein the sealing material overlaps a portion of the resin film, a portion of the electrode and a portion of the wiring.

Electronic device having liquid crystal display device

Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wiringsfor the first layer which are not electrically connected are formed in regions Rand R, and wiringsextending from the pixel section are formed in a region R, and wiringshaving connection end portionsare formed in a region R. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wiringsfor the second layer are formed to embed the gaps between the wiringsto, and also the wiringsand the wiringswhich extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.

Liquid crystal display device

A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

Display device with sealing material

Liquid crystal display device having particular conductive layer

The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Display device

To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, the image sensor includes a thin film transistor is in a pixel of a plurality of pixels, an insulating layer is over the thin film transistor, a plurality of first electrodes, which is a shielding layer, is over the insulating layer, a photoelectric conversion layer including a semiconductor film is over the plurality of the first electrodes, and a second electrode over the photoelectric conversion layer. The thin film transistor can include polycrystal silicon. The semiconductor film can include amorphous silicon.

Image sensor and image sensor integrated type active matrix type display device

A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

Liquid crystal display panel

A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

Active matrix type liquid crystal display device

Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved.

Method of fabricating semiconductor device

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

Semiconductor device and method for manufacturing the same

There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

Semiconductor device and method of manufacture thereof

A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

Semiconductor device including transistors with silicided impurity regions

Liquid crystal display device having particular conductive layers

Growing community of inventors

Kanagawa, Japan

Hongyong Zhang